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Optimizing Storage Cells with Graphene

German-Greek project is developing devices for the future of data storage

Jülich, 10 December 2013 – Resistive memory cells, or ReRAM for short, are regarded as promising candidates for future data storage devices. This non-volatile type of storage can write and read information a thousand times faster than flash memory and, at the same time, requires considerably less energy. In collaboration with partners in Greece, Jülich scientists want to use graphene to improve the long-term stability and lifetime of the storage cells. The Federal Ministry of Education and Research (BMBF) is supporting the G-ReRAM project with funding of € 200,000. Thomas Rachel, Parliamentary State Secretary to the Federal Minister of Education and Research and Member of the German Bundestag, presented the grant notification at Forschungszentrum Jülich today.

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