Search

link to homepage

Navigation and service


Solution for ReRAMs with Long-Term Stability

Jülich researchers develop design rules for reliable memristive random-access memory cells

Jülich, 19 October 2015 – They are many times faster than flash memories and require significantly less energy: ReRAM memories could revolutionize computer technology in the next few years. However, memristive memory cells are still too error-prone for many applications. A team of researchers from Jülich and Aachen have now discovered how storage cells that rapidly lose data can be distinguished microscopically from those with long-term stability. At the same time, they hit upon a solution for error-resistant storage cells: a storage layer for oxygen ions which can slow down and possibly even completely suppress the undesirable process. The results have been published in the journal Nature Communications.

more (in German)


Servicemeu

Homepage