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Resistive Switching Mechanism Explained

Jülich, 19 April 2017 – In terms of future data storage systems, ReRAM memories are considered to have great potential. They enable energy-efficient switching within nanoseconds and retain stored information on a permanent basis. How ReRAM cells work exactly has up until now not been fully understood. This in turn makes it difficult to predict switching characteristics. Now, however, an interdisciplinary team of researchers from Jülich, Aachen, and Grenoble has succeeded in explaining the switching mechanism.

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