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PhD Position: Research of Si based Tunnel Field-Effect Transistors

Advertising institute: PGI-9 - Semiconductor Nanoelectronics
Reference number: D056/2014, Physics or electrical engineering

The position offers you:
The Peter Grünberg Institute for Semiconductor Nanoelectronics (PGI-9-IT) at the Research Centre Jülich GmbH offers a graduate position on the research of Si based MOS- and Tunnel-Field-Effect Transistors (TFET). The TFETs are most promising for energy efficient electronics, specifically for ultra low power applications. Recently, we have made remarkable progress in the development of TFETs and the epitaxial growth of Si-Ge-Sn, a novel group IV semiconductor. We pursue different device architectures, including highly scaled nanowire transistors with high-k/metal gates. Within the frame of this proposal these new semiconductor should be implemented in MOSFET and TFET devices. The novel group IV semiconductor system Si-Ge-Sn allows band gap tuning in a wide range, not accessible with Si and Ge so far. We also have solid experience in implementing elastic strain to optimize band gap and mobility of these materials. For more details we would like to refer to one of our recent publications: L. Knoll et al. Electronic Device Letters 34 (2013) 813 doi: 10.1109/LED.2013.2258652 and references therein. All required materials are prepared in house. S. Wirths et al. (Appl. Phys. Lett. 102, 192103 (2013); doi: 10.1063/1.4805034) describe striking results on CVD epitaxy of Si-Ge-Sn layers. Gate oxides (HfO2 etc.) are deposited by atomic layer deposition and the nitrides (e.g.TiN) by vapour phase deposition in a 200/300 mm cluster tool. The proposal is partially funded by the European STREP Project “E2SWITCH” and by a national BMBF project on Ultra Low Power Electronics with Tunnel-Field Effect Transistors.
The institute is equipped with various deposition tools, ion implanters, simulation software, new cleanroom facilities (Helmholtz Nanofacility (HNF) offering standard and electron-beam lithography capabilities down to the few-nanometer range and excellent characterization facilities. This guarantees an ideal working environment.

Qualification required:
Diploma or master degree in physics or electrical engineering. Excellent knowledge of solid state physics and enthusiasm and skills for clean room work are expected. Candidates can graduate either at the faculty of physics or electrical engineering at the RWTH Aachen University.

Please submit applications and requests for further information to:
Prof. Dr. Siegfried Mantl
Peter Grünberg Institut -9/IT (PGI-9-IT)
Forschungszentrum Jülich
D-52425 Jülich
Germany

s.mantl@fz-juelich.de
http://www.fz-juelich.de/pgi/pgi-9/EN/Home/home_node.html
Tel.: +49 2461-61 3643
Fax: +49 2461-61 4673


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