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Master theses: Tuning the variability of SrTiO3
based memories

Advertising institute: PGI-7 - Electronic Materials
Reference number: D119/2017, Materials science, physics, electrical engineering

Resistive memories (ReRAMs) are a group of multifunctional, highly dense and ultra-fast memories. Their future applications are, among others, the replacement of flash memories or the implication in neuromorphic systems. For both of these applications variability plays a central role. The variability is a measure for the reproducibility of the resistive states in ReRAMs. When aiming for the replacement of flash memories by ReRAMs a low variability is desirable, while a controlled higher variability can be utilized for neuromorphic systems.

In the case of ReRAMs based on the model material SrTiO3 the variability is mainly influenced by the low resistive filament. The formation and disruption of this filament defines the low (LRS) and high (HRS) resistive state. The goal of this thesis is to develop a model to tune the variability by varying the growth parameters and lithography of epitaxial SrTiO3. This model can be a central key for the future application of resistive memories.

  • Growing epitaxial SrTiO3 thin films via pulsed laser deposition
  • Lithography
  • Electrical characterization of the resistive switching, with emphasis on the variability
  • Understanding the results in context with spectro-microscopic results

Requirements

  • Willingness to work interdisciplinary
  • Experimental skills
  • Teamwork

Contact persons
Prof. Dr. Regina Dittmann / Felix Hensling, M.Sc.
Peter Grünberg Institut (PGI-7) - FZ Jülich
Tel. 02461-61-4760 / 02461-61-6302
E-Mail: r.dittmann@fz-juelich.de
f.hensling@fz-juelich.de

Announcement as pdf file:  Master theses: Tuning the variability of SrTiO3 based memories (PDF, 408 kB)


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