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Scientist on growth of SiGe heterostructures for the development of solid-state quantum bits

Advertising institute: PGI-9 - Semiconductor Nanoelectronics
Reference number: 2017-046

The Peter Grünberg Institute (PGI) is dedicated to fundamental research on novel physical concepts and emerging materials in information technology and related fields. It also provides a state-of-the-art platform for the development of process technologies, devices and innovative nanoelectronic material systems.
The subinstitute Semiconductor Nanoelectronics (PGI-9) investigates fundamental problems in semiconductor physics and in semiconductor materials. For example quantum computing promises to solve certain problems that are practically unsolvable on classical computers. The main component of quantum computers are quantum bits (qubits), i.e. quantum mechanical two-level systems that are in a superposition of both states at the same time. A possible avenue to realize solid-state qubits are electrostatically defined quantum dots (QDs). In particular, SiGe QDs are promising for qubit applications, owing to their extraordinary long coherence times and high fidelity to manipulate the electron spins.

We are looking to recruit a as soon as possible a

Scientist on growth of SiGe heterostructures for the development of solid-state quantum bits

Your Job:

In the frame of the Helmholtz Association funded project on “Scalable Solid State Quantum Computing”, we are looking for a postdoctoral researcher to carry out molecular-beam epitaxy (MBE) and chemical vapour deposition (CVD) of conventional and isotopically pure SiGe heterostructures for the realization of solid-state qubits. In particular, the candidate is expected to operate the MBE and CVD systems to grow the sophisticated heterostructures and to carry out structural and electrical characterization on them, for example x-ray diffraction, atomic force microscopy, scanning electron microscopy, transmission electron microscopy, Hall measurements etc. The candidate will be in close contact with our colleagues at RWTH Aachen who will process these qubits and characterize their properties.

We are looking for a scientist to carry out the following tasks:

  • MBE and CVD growth of SiGe heterostructures with focus on reaching high mobilities
  • Structural and electrical characterization, e.g. XRD, AFM, SEM, TEM, Hall measurements
  • Transfer of samples to our colleagues at RWTH Aachen
  • Attending regular meetings with our colleagues in Aachen to share and discuss latest results
  • Modifying the MBE system for the growth of isotopically pure Si and Ge materials

Your Profile:

  • Doctor degree in physics or material science with a solid background in

condensed matter physics
  • Experience in growth and characterization techniques of semiconductors
  • Strong scientific communications and presentation skills
  • Well-structured and systematic research approach, experimental skills

Our Offer:

  • Carrying out research on a cutting-edge topic
  • State-of-the-art SiGe MBE and CVD systems in a well-equipped research infrastructure
  • Possibilities to attend national and international conferences
  • International, interdisciplinary working environment on an attractive research campus, ideally situated between the cities of Cologne, Düsseldorf, and Aachen
  • Limited for 2 years
  • Full-time position with the option of slightly reduced working hours
  • Salary and social benefits in conformity with the provisions of the Collective Agreement for the Civil Service (TVöD).


Forschungszentrum Jülich aims to employ more women in this area and therefore particulary welcomes applications from women.

We also welcome applications from disabled persons.

We look forward to receiving your application, preferably online via our online recruitment system on our career site, quoting the above-mentioned reference number.

Contact Human Resource Development
Anja Schurf
Tel.:+49 2461 61 9700


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