link to homepage

Navigation and service

Research Scientist on “Low charge noise MBE grown nanostructures for qubit applications”

Advertising institute: PGI-9 - Semiconductor Nanoelectronics
Reference number: 2017-081

The Peter Grünberg Institute (PGI) is dedicated to fundamental research on novel physical concepts and emerging materials in information technology and related fields. It also provides a state-of-the-art platform for the development of process technologies, devices and innovative nanoelectronic material systems.
The subinstitute of Semiconductor Nanoelectronics (PGI-9) investigates fundamental problems in semiconductor physics and semiconductor materials. The research benefits from state-of-the-art equipment for the growth of innovative nanoelectronic material systems and the device processing. Various microscopy, optical and (magneto-) electrical methods are used for the characterization of the structures and devices. The subinstitute is part of the efforts of FZJ in collaboration with University of Aachen and Karlsruhe Institute of Technology for the achievement of a medium-scale quantum computing system based on two major solid-state qubit types, superconducting (Josephson) and semiconducting (spin). For the later, one of the envisaged host material system is GaAs/AlGaAs in which the qubit is obtained using gate defined quantum dots (QDs) in high quality two dimensional electron gas (2DEG) structures. One major barrier for the scaling up of these qubit systems is the charge noise levels in the host material, which should be minimized by the optimization of the structure design, the growth/deposition of the specific structure and finally, the processing of the QD based qubits.

We are looking to recruit as soon as possible a

Research Scientist on “Low charge noise MBE grown nanostructures for qubit applications”

Your Job:

Within this project, ultra-low-noise GaAs-based semiconductor heterostructures for qubit processing will be developed using state-of-the-art epitaxial and deposition techniques in a recently installed ultra high vacuum (UHV) multi-material cluster tool which combine MBE, ALD and sputtering systems. The aim of the project is to characterize, understand and reduce material related charge noise. Initially, the growth of GaAs/AlGaAs 2DEG heterostructures will be optimized for high mobility. The effects from surface and interface defects will be minimized by testing in-situ deposited gate stacks, including both high-k dielectrics and metals. Noise characterization of the specific structures will be carried out using carrier transport measurements through quantum point contacts (QPCs).

The candidate should perform the following tasks:

  • MBE growth of high mobility GaAs/AlGaAs 2DEG heterostructures
  • In-situ atomic layer deposition (ALD) of high-k dielectrics on MBE grown high mobility heterostructures
  • In-situ deposition of metal gates using a metal MBE system
  • Structural, optical and electrical characterization of the specific structures, e.g. XRD, AFM, SEM, TEM, PL, Hall measurements, etc.
  • Processing of QPCs
  • Noise characterization of the investigated structures

Your Profile:

  • University degree and subsequent doctoral degree in physics or materials science
  • Extended experience in the MBE growth of III-V semiconductors
  • Good knowledge in solid state physics
  • Experience in characterization methods of thin film hybrid structures
  • Experience in the processing and electrical characterization of nanodevices is an advantage
  • Well-structured and systematic research approach
  • Capacity for collaborating with others and high degree of initiative, flexibility, and commitment

Our Offer:

  • Interesting and challenging research environment and a possibility to work in the state-of-the art research facility
  • International, interdisciplinary working environment on an attractive research campus, ideally situated between the cities of Cologne, Düsseldorf, and Aachen
  • Limited for 2 years
  • Full-time position with the option of slightly reduced working hours
  • Salary and social benefits in conformity with the provisions of the Collective Agreement for the Civil Service (TVöD).

Forschungszentrum Jülich aims to employ more women in this area and therefore particulary welcomes applications from women.

We also welcome applications from disabled persons.

We look forward to receiving your application, preferably online via our online recruitment system on our career site, quoting the above-mentioned reference number.

Contact Human Resource Development
Anja Schurf
Tel.:+49 2461 61 9700