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Prof. Dr. Mikael Östling,
KTH Royal Institute of Technology, Kista-Stockholm, Sweden

PGI Lecture Hall, Building 04.8, 2nd Floor, Room 365

16.10.2015 11:00 Uhr

Very high voltage SiC power switches and energy-efficient integrated SiC drive electronics


This presentation will give a review of present device technology status as well as discuss the most promising application areas for the high power silicon carbide device technology.

A discussion of the various device concepts will be presented, including the major technologies for MOSFETs, JFETs BJTs, PN and Schottky diodes respectively. A comparison with present silicon based power device families such as IGBTs and CoolMOS will be included.

Commercial and research device results will be covered. Recent results of research and demonstration of high temperature SiC devices and circuits will be presented.

About Mikael Östling

Mikael Östling received his MSc degree in engineering physics and the PhD degree from Uppsala University, Sweden in 1980 and 1983 respectively He has been with the faculty of EE of KTH, Royal Institute of Technology in Stockholm, Sweden since 1984 where he holds a position as professor in solid state electronics. Between 2000 and 2004 he was head of the department of Microelectronics and Information Technology. He is department head of Integrated Devices and Circuits and was the dean of the School of Information and Communication Technology, KTH, between 2004 – 2012.

Östling was a senior visiting Fulbright Scholar 1993-94 with the Center for Integrated Systems at Stanford University, and a visiting professor with the University of Florida, Gainesville. He initiated and was appointed program director by the Swedish Foundation for Strategic Research for a silicon nanoelectronics national program 2000-2007. From 2006 he is a member of the ENIAC SCC Management Team in the EU. In 2005 he co-founded the company TranSiC. He has been frequently engaged as expert reviewer for the framework programs in EU and for the European Research Council. In 2009 he received the first ERC award for advanced investigator grant.

His research interests are silicon/silicon germanium devices and process technology for very high frequency, as well as device technology for wide bandgap semiconductors with special emphasis on silicon carbide for high power applications. He has supervised 35 PhD theses work, and been the author of 1 text book, 10 book chapters and more than500 scientific papers published in international journals and conferences. Mikael Östling is an editor of the IEEE Electron Device Letters and a fellow of the IEEE.


Prof. Dr. Thomas Schäpers
Telefon: +49 2461 61-2668
Fax: +49 2461 61-2940