Prof. Takanori Koshikawa
Fundamental Electronics Research Institute, Osaka Electro-Communication University
Development of very high brightness and high spin-polarized low energy electron microscope and application to spintronics thin film materials
- 05.Jul.2012 11:00
- Room 1 - 3, Bld. 4.8
Memory size has been tremendously enlarged after the development of GMR. Recently new concept MRAM (magnetic random access memory) has been proposed, in which the magnetic domain wall can be driven with current (current-induced domain wall motion: CWM) using perpendicular magnetic anisotropy. [Co/Nix]y multi-layer nano-wires might be an important candidate, which has strong perpendicular magnetic anisotropy. In order to clarify the detailed magnetic thin film formation and their property, we need more sophisticated magnetic microscopy which gives us high spatial resolution, dynamic observation and so on. Here we will present the results of development of a novel high spin-polarized and high brightness low energy electron microscope (SPLEEM) with new ideas; strained super lattice cathodes for high spin-polarization (90%), the back side illumination of laser beam to the cathode for very high brightness (1.3x107 A/cm2 sr) and XHV (extreme high vacuum) at the electron source chamber for long life time (over 2 months). We have investigated the detailed magnetization process of those multi-layer with newly developed SPLEEM. The magnetic images of Co/Ni2/W(110) and 1 ML Au on Co/Ni2/W(110) show that Au ultra thin film conducts to the strong perpendicular magnetic anisotropy.
Fax: +49 2461 61-2620