2013
Book/Report
15th European Workshop on Metalorganic Vapour Phase Epitaxy (EWMOVPE XV) June 2-5, 2013, Aachen, Germany
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Schriften des Forschungszentrums Jülich. Reihe Information / Information 27, 390 S. (2013)
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Book/Report
JARA-FIT Annual Report 2012
Jülich : Forschungszentrum Jülich & RWTH Aachen, JARA-FIT Annual Report 5, pp. 173 (2013)
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Journal Article
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors
IEEE electron device letters 34(6), 813 - 815 (2013) [10.1109/LED.2013.2258652]
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Domain formation due to surface steps in topological insulator Bi$_{2}$Te$_{3}$ thin films grown on Si (111) by molecular beam epitaxy
Applied physics letters 103(8), 081902 (2013) [10.1063/1.4818456]
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Journal Article
Probing relaxation times in graphene quantum dots
Nature Communications 4, 1753 (2013) [10.1038/ncomms2738]
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Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride
Physical review / B 88(8), 085419 (2013) [10.1103/PhysRevB.88.085419]
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Journal Article
Graphene-based charge sensors
Nanotechnology 24(44), 444001 - (2013) [10.1088/0957-4484/24/44/444001]
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Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
Physica status solidi / B 250(12), 2692 - 2696 (2013) [10.1002/pssb.201300295]
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Journal Article
Wide Gap Microcrystalline Silicon Oxide Emitter for a-SiO $_{x}$ :H/c-Si Heterojunction Solar Cells
Japanese journal of applied physics 52(12R), 122304 (2013) [10.7567/JJAP.52.122304]
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Report
Effiziente, kompakte und kontrollierbare Einzelphotonenquellen für die Quantenkommunikation (EPHQUAM) : Schlussbericht ; Teilvorhaben: Kompakte elektrisch betriebene Einzelphotonenquelle in III-Nitrid-Nanodrähten mittels akustischer Oberflächenwellen ; Berichtszeitraum: 01.01.2009 - 30.09.2012
Technische Informationsbibliothek u. Universitätsbibliothek 28 pp. (2013) [10.2314/GBV:770160883]
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Journal Article
Development of redox glasses and subsequent processing by means of pulsed laser deposition for realizing silicon-based thin-film sensors.
Electrochimica acta 113, 762 - 767 (2013) [10.1016/j.electacta.2013.08.092]
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Highly birefringent, low-loss liquid crystals for terahertz applications
APL materials 1, 012107 (2013) [10.1063/1.4808244]
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Journal Article
Generation of THz transients by photoexcited single-crystal GaAs meso-structures
Applied physics / B 113(3), 339 - 344 (2013) [10.1007/s00340-013-5495-1]
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A study of the structural properties of GaN implanted by various rare-earth ions
Nuclear instruments & methods in physics research / B 307, 446 - 451 (2013) [10.1016/j.nimb.2012.11.079]
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Structural and optical properties of individual GaP/ZnO core–shell nanowires
Vacuum 98, 106 - 110 (2013) [10.1016/j.vacuum.2012.12.005]
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Rapid thermal synthesis of GaN nanocrystals and nanodisks
Journal of nanoparticle research 15(1), 1411 (2013) [10.1007/s11051-012-1411-6]
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Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires
Nanotechnology 24(32), 325201 - (2013) [10.1088/0957-4484/24/32/325201]
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Journal Article
Strain States in YSZ / RE2O3 (RE = Er, Y) Multilayers as a Function of Layer Thickness and Their Effect on Interface Conductivity and Diffusion
MRS online proceedings library 1542, mrss13-1542-g08-02 (2013) [10.1557/opl.2013.577]
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Journal Article
Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
Applied physics letters 103(26), 263103 (2013) [10.1063/1.4855436]
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Journal Article
Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
Applied physics letters 103(23), 231909 - (2013) [10.1063/1.4838695]
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Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion–crystallization process
Journal of nanoparticle research 15(10), 1981 (2013) [10.1007/s11051-013-1981-y]
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Journal Article
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
Journal of crystal growth 384, 71 - 76 (2013) [10.1016/j.jcrysgro.2013.09.018]
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Journal Article
Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate
Technical physics letters 39(5), 427 - 430 (2013) [10.1134/S1063785013050039]
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Spin-polarization limit in $Bi_{2}Te_{3}$ Dirac cone studied by angle- and spin-resolved photoemission experiments and ab initio calculations
Physical review / B 87(3), 035127 (2013) [10.1103/PhysRevB.87.035127]
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Journal Article
Epitaxial growth of europium monoxide on diamond
Applied physics letters 103(22), 222402 - (2013) [10.1063/1.4833550]
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Etched graphene quantum dots on hexagonal boron nitride
Applied physics letters 103(7), 073113 (2013) [10.1063/1.4818627]
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Journal Article
Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers
Journal of electronic materials 42(5), 826 - 832 (2013) [10.1007/s11664-013-2473-7]
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Journal Article
Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts
Nuclear instruments & methods in physics research / B 307, 408 - 411 (2013) [10.1016/j.nimb.2012.11.088]
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Journal Article
AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates
Semiconductor science and technology 28(8), 085006 - (2013) [10.1088/0268-1242/28/8/085006]
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p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
IEEE transactions on electron devices 60(10), 3005 - 3011 (2013) [10.1109/TED.2013.2272330]
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Tensely strained GeSn alloys as optical gain media
Applied physics letters 103(19), 192110 - (2013) [10.1063/1.4829360]
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Journal Article
Inducing exchange bias in La_{0.67}Sr_{0.33}MnO_{3−δ}/SrTiO_{3} thin films by strain and oxygen deficiency
Physical review / B 88(14), 144427 (2013) [10.1103/PhysRevB.88.144427]
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Journal Article
Self-catalyzed VLS grown InAs nanowires with twinning superlattices
Nanotechnology 24(33), 335601 - (2013) [10.1088/0957-4484/24/33/335601]
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Journal Article
Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowires
Journal of crystal growth 378, 506 - 510 (2013) [10.1016/j.jcrysgro.2012.12.035]
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Distortions of the coulomb blockade conductance line in scanning gate measurements of inas nanowire based quantum dots
Journal of experimental and theoretical physics 116(1), 138 - 144 (2013) [10.1134/S1063776112130195]
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Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires
Nanotechnology 24(3), 035203 (2013) [10.1088/0957-4484/24/3/035203]
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Journal Article
From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE
16th International Conference on Metalorganic Vapor Phase Epitaxy, Meeting location,
Journal of crystal growth 370, 141 - 145 (2013) [10.1016/j.jcrysgro.2012.09.059]
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Journal Article
Spectral Sensitivity Tuning of Vertical InN Nanopyramid-Based Photodetectors
Japanese journal of applied physics 52(8S), 08JF05 (2013) [10.7567/JJAP.52.08JF05]
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Journal Article
Highly Transparent Conducting Polymer Top Contacts for Future III–Nitride Based Single Photon Emitters
Japanese journal of applied physics 52, 08JH10 - (2013) [10.7567/JJAP.52.08JH10]
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Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range
Nanotechnology 24(40), 405302 - (2013) [10.1088/0957-4484/24/40/405302]
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Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy
Applied physics letters 103(16), 162904 - (2013) [10.1063/1.4825367]
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Journal Article
Si substrate preparation for the VS and VLS growth of InAs nanowires
Physica status solidi / Rapid research letters 7(10), 840 - 844 (2013) [10.1002/pssr.201307229]
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Journal Article
Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs
IEEE transactions on electron devices 60(10), 3040 - 3046 (2013) [10.1109/TED.2013.2277559]
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Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation
Japanese journal of applied physics 52, 08JN02 - (2013) [10.7567/JJAP.52.08JN02]
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Journal Article
LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces
Nature Communications 4, 9 (2013) [10.1038/ncomms3351]
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Site-controlled growth of indium nitride based nanostructures using metalorganic vapour phase epitaxy
Journal of crystal growth 370, 336 - 341 (2013) [10.1016/j.jcrysgro.2012.08.034]
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Journal Article
Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics
Microelectronic engineering 109, 381 - 384 (2013) [10.1016/j.mee.2013.04.021]
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Journal Article
Reduced Pressure CVD Growth of Ge and Ge1-xSnx Alloys
ECS journal of solid state science and technology 2(5), N99 - N102 (2013) [10.1149/2.006305jss]
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Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing
Journal of applied physics 113(20), 204902 (2013) [10.1063/1.4807001]
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Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
Applied physics letters 102(19), 192103 - (2013) [10.1063/1.4805034]
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Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
Applied physics letters 102(19), 192904 - (2013) [10.1063/1.4805037]
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Long electron spin coherence in ion-implanted GaN: The role of localization
Applied physics letters 102(19), 192102 - (2013) [10.1063/1.4804558]
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Relaxor ferro- and paraelectricity in anisotropically strained SrTiO3 films
Journal of applied physics 113(16), 164103 - (2013) [10.1063/1.4802676]
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Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6
Solid state electronics 83, 2 - 9 (2013) [10.1016/j.sse.2013.01.032]
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Frequency anomaly in the Rashba-effect induced magnetization oscillations of a high-mobility two-dimensional electron system
Physical review / B 87(3), 035307 (2013) [10.1103/PhysRevB.87.035307]
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Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high K/metal gate stacks on Si
Microelectronic engineering 109, 109 - 112 (2013) [10.1016/j.mee.2013.03.066]
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Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface
The journal of chemical physics 138(15), 154709 (2013) [10.1063/1.4801324]
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Axial strain in GaAs/InAs core-shell nanowires
Applied physics letters 102(4), 043109 - (2013) [10.1063/1.4790185]
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Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV
Applied physics letters 102(3), 031607 (2013) [10.1063/1.4789524]
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Effect of film thickness and biaxial strain on the curie temperature of EuO
Applied physics letters 102(6), 062404 - (2013) [10.1063/1.4789972]
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Layer-by-layer shuttered molecular-beam epitaxial growth of superconducting Sr1–xLaxCuO2 thin films
Journal of applied physics 113(5), 053911 (2013) [10.1063/1.4790150]
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Electronic structure, surface morphology, and topologically protected surface states of Sb2Te3 thin films grown on Si(111)
Journal of applied physics 113(5), 053706 (2013) [10.1063/1.4789353]
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Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires
Nanotechnology 24(8), 085603 (2013) [10.1088/0957-4484/24/8/085603]
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