2019
Journal Article
Spin dephasing of electrons and holes in isotopically purified ZnSe/(Zn,Mg)Se quantum wells
Physical review / B 100(20), 205415 (2019) [10.1103/PhysRevB.100.205415]
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Journal Article
Insulating State in Low‐Disorder Graphene Nanoribbons
Physica status solidi / B Basic research 256(12), 1900269 - (2019) [10.1002/pssb.201900269]
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Journal Article
Spin States Protected from Intrinsic Electron–Phonon Coupling Reaching 100 ns Lifetime at Room Temperature in MoSe 2
Nano letters 19(6), 4083 - 4090 (2019) [10.1021/acs.nanolett.9b01485]
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Journal Article
Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fields
Review of scientific instruments 90(8), 084706 (2019) [10.1063/1.5089207]
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Journal Article
Selective area growth and stencil lithography for in situ fabricated quantum devices
Nature nanotechnology 14(9), 825 - 831 (2019) [10.1038/s41565-019-0506-y]
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Journal Article
Self-assembly and properties of domain walls in BiFeO3 layers grown via molecular-beam epitaxy
APL materials 7(7), 071101 - (2019) [10.1063/1.5103244]
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Journal Article
Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX
Solid state electronics 159, 71 - 76 (2019) [10.1016/j.sse.2019.03.037]
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Journal Article
Impact of Gate–Source Overlap on the Device/Circuit Analog Performance of Line TFETs
IEEE transactions on electron devices 66(9), 4081 - 4086 (2019) [10.1109/TED.2019.2927001]
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Journal Article
Long-lived nonequilibrium superconductivity in a noncentrosymmetric Rashba semiconductor
Physical review / B 100(2), 024504 (2019) [10.1103/PhysRevB.100.024504]
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Book/Internal Report
Controlling structural and physical properties of epitaxial La1-xSrxMnO3-δ films through oxygen stoichiometry
Jara Fit Annual Report 2018 2 pp. (2019)
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Journal Article
Experimental observation of a negative grey trion in an electron-rich WSe 2 monolayer
Journal of physics / Condensed matter 31(41), 415701 - (2019) [10.1088/1361-648X/ab2f56]
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Journal Article
Signatures of induced superconductivity in AlOx-capped topological heterostructures
Solid state electronics 155, 111 - 116 (2019) [10.1016/j.sse.2019.03.003]
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Journal Article
Exploiting topological matter for Majorana physics and devices
Solid state electronics 155, 99 - 104 (2019) [10.1016/j.sse.2019.03.005]
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Journal Article
Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents
Microelectronic engineering 215, 110992 - (2019) [10.1016/j.mee.2019.110992]
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Journal Article
Development of a Combined pH‐ and Redox‐Sensitive Bi‐Electrode Glass Thin‐Film Sensor
Physica status solidi / A Applied research A 216(12), 1900114 (2019) [10.1002/pssa.201900114]
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Report/Master Thesis
MBE growth and characterization of InAs/GaSb core/shell nanowire arrays
Jülich : Forschungszentrum Jülich 101 pp. (2019) = Masterarbeit, RWTH Aachen, 2019
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Journal Article
Optical and structural characterization of orthorhombic LaLuO3 using extreme ultraviolet reflectometry
Thin solid films 680, 94 - 101 (2019) [10.1016/j.tsf.2019.04.037]
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Journal Article
Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters
Solid state electronics 155, 139-143 (2019) [10.1016/j.sse.2019.03.013]
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Journal Article
MBE Growth and Optical Properties of Isotopically Purified ZnSe Heterostructures
ACS applied electronic materials 1(1), 44 - 50 (2019) [10.1021/acsaelm.8b00006]
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Journal Article
Dresselhaus spin-orbit coupling in [111]-oriented semiconductor nanowires
Physical review / B 99(8), 085437 (2019) [10.1103/PhysRevB.99.085437]
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Journal Article
Metal organic vapor phase epitaxy of $$\hbox {Ge}_{1}\hbox {Sb}_{2}\hbox {Te}_{4}$$ Ge 1 Sb 2 Te 4 thin films on Si(111) substrate
Applied physics / A Materials science & processing A 125(3), 163 (2019) [10.1007/s00339-019-2465-4]
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Journal Article
Impact of tensile strain on low Sn content GeSn lasing
Scientific reports 9(1), 259 (2019) [10.1038/s41598-018-36837-8]
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Journal Article
Reversible Control of Physical Properties via an Oxygen-Vacancy-Driven Topotactic Transition in Epitaxial La 0.7 Sr 0.3 MnO 3− δ Thin Films
Advanced materials 31(7), 1806183 - (2019) [10.1002/adma.201806183]
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Journal Article
2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs
IEEE transactions on electron devices 66(1), 132-138 (2019) [10.1109/TED.2018.2856891]
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