Institute 1: Semiconductor Nanoelectronics
a) Contacted GaN nanowire, b) 3-dimensional quantum dot crystal created by 11 Ge dot layers. (Image is composed of two TEM and one AFM micrograph)
Scientific Program
- The institute investigates fundamental problems in semiconductor physics and in semiconductor materials.
- In the device development alternative concepts are explored and property limits are explored, e. g. the maximum transistor frequency and the minimum transistor cross section.
- The epitaxy of SiGe, classical III/V compounds and of GaN is a broad activity. Electronic and optical properties of the grown layers are measured.
- Quantum wire structures are investigated to study the quantum mechanical limit in the nanoelectronic devices.
- Si/SiGe nanostructures are examined to find promissing pathways to drive current CMOS technology to its limits.
- Templated selfassembly of semiconductor nanostructures in 2- and 3-dimensional arrays and quantum dot crystals is investigated to explore the feasibility of this new materials for future information technology.
| Address | Director |
| Institute 1: Semiconductor Nanoelectronics (IBN-1) Forschungszentrum Jülich GmbH D-52425 Jülich Germany |
 Prof. Detlev GrützmacherTel.: ( 49) 24 61/61-2341 Fax: ( 49) 24 61/61-2333 |
last change 04.01.2008 | | Print