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IBN-1 research teams:

MOVPE (H. Hardtdegen)

III-Nitride MBE (R. Calarco)

III-V MBE (M. Lepsa)

Strained silicon on oxides (D. Buca)

Alternative gate dielektrics (J. Schubert)

Vertical Si-based devices (J. Moers)

Schottky-barrier MOSFETs (Q.-T. Zhao)

III-V and nitride-devices (M. Marso)

Quantum transport, spin electronics (Th. Schäpers)

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last change 30.07.2008 | Thomas Schäpers | Print