PGI-5 researchers have made a significant contribution to elucidating the surface structure of gallium nitride nanowires. Their findings are also likely to be applicable to nanowires made from other semiconductors, providing fresh impetus for the development of miniature optoelectronic components. The image illustrates the density of states at the surface of a gallium nitride crystal (below) under vacuum, and thus the probability that the electrons take on certain energy levels (red = high, green = low).
Original publication: Hidden surface states at non-polar GaN (1010) facets: Intrinsic pinning of nanowires; L. Lymperakis et al.; Appl. Phys. Lett. 103, 152101 (2013), published online 7 October 2013, DOI: 10.1063/1.4823723, Article