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Resistive Switching Mechanism Explained
Jülich, 19 April 2017 – In terms of future data storage systems, ReRAM memories are considered to have great potential. They enable energy-efficient switching within nanoseconds and retain stored information on a permanent basis. How ReRAM cells work exactly has up until now not been fully understood. This in turn makes it difficult to predict switching characteristics. Now, however, an interdisciplinary team of researchers from Jülich, Aachen, and Grenoble has succeeded in explaining the switching mechanism.
More: Resistive Switching Mechanism Explained …

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New Approaches in Information Technology

In the research alliance JARA, section JARA-FIT, we contribute to creating the basis for the information technology of the future. More: New Approaches in Information Technology …

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Computer simulations with high-performance computers

In the research alliance JARA, section JARA-HPC, we contribute to making full use of the opportunities computer simulations offer to address current scientific issues. More: Computer simulations with high-performance computers …

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Close-up on Science

Our research often gives rise to fascinating pictures, a selection of which you can find here. They reflect the impressive variety of research topics and methods used at PGI.  More: Close-up on Science …


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