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Silicon Germanium nanostructures

Konstantin Romanyuk, Vasily Cherepanov, Bert Voigtländer


The direct synthesis of nanostructures by molecular beam epitaxy is an important ingredient of the bottom up approach in the Si/Ge device fabrication. However, creation of nanostructures with well defined properties still remains a challenge. Several issues become very important when one goes down to the nanoscale: size uniformity, material composition, interface sharpness, thermodynamic and kinetic peculiarities of the growth.

Growth of nanosructures observed Live

Nanowires and Nanorings at the atomic level

Si-Ge contrast in STM and intermixing

Symmetry breaking in the growth of 2D Si and Ge island on SI(111)