Silicon Germanium nanostructures
Konstantin Romanyuk, Vasily Cherepanov, Bert Voigtländer
The direct synthesis of nanostructures by molecular beam epitaxy is an important ingredient of the bottom up approach in the Si/Ge device fabrication. However, creation of nanostructures with well defined properties still remains a challenge. Several issues become very important when one goes down to the nanoscale: size uniformity, material composition, interface sharpness, thermodynamic and kinetic peculiarities of the growth.