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Zeitschriftenbeiträge 2009

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Josephson tunnel junctions with strong ferromagnetic interlayer
Physical review / B 79, 054501 (2009) [10.1103/PhysRevB.79.054501]  GO

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Selection of optimized materials for CBRAM based on HT-XRD and electrical test results
Journal of the Electrochemical Society 156, H729 - H 733 (2009) [10.1149/1.3160570]  GO


Comment on "Colossal ionic conductivity at interfaces of epitaxial ZrO2:Y2O3/SrTiO3 heterostructures
Science 324, 465 (2009) [10.1126/science.1168940]  GO

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Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell
Physical review / B 79, 195317 (2009) [10.1103/PhysRevB.79.195317]  GO

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Abnormal bipolar-like resistance change behavior induced by symmetric electroforming in Pt/TiO2/Pt resistive switching cells
Nanotechnology 20, (2009) [10.1088/0957-4484/20/37/375201]  GO

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Dielectric properties and phase transition in SrBi2Nb2O9–SrBi2Ta2O9 solid solution
Ceramics International 35, 2351 - 2355 (2009) [10.1016/j.ceramint.2009.01.013]  GO

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Liquid injection atomic layer deposition of crystalline TiO2 thin films with a smooth morphology from Ti(O-i-Pr)2(DPM)2
Journal of the Electrochemical Society 156, D296 - D300 (2009) [10.1149/1.3138722]  GO

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Growth of noble metal Ru thin films by liquid injection atomic layer deposition
The journal of physical chemistry / C 113, 11329 (2009) [10.1021/jp9021882]  GO

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Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications
Applied physics / A 94, 739 - 743 (2009) [10.1007/s00339-008-5045-6]  GO

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An Integrated Microelectromechanical Microwave Switch Based on Piezoelectric Actuation
Journal of electroceramics 22, (2009) [10.1007/s10832-008-9457-7]  GO

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High density 3D memory architecture based on the resistive switching effect
Solid state electronics 53, 1287 - 1292 (2009) [10.1016/sse.2009.09.034]  GO

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Cu-adatom-mediated bonding in close-packed benzoate/Cu (110)-Systems
Langmuir 25, 856 - 864 (2009) [10.1021/la801822e]  GO

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Transitions at domain boundaries in octanethiol monolayers on Au(111)
Surface science 603, 1156 - 1159 (2009) [10.1016/j.susc.2009.03.002]  GO

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Crystal and magnetic structure of single-crystal La1-xSrxMnO3 (x ~ 1/8)
The European physical journal / B 67, 149 - 157 (2009) [10.1140/epjb/e2009-00019-5]  GO

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Resistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography
Microelectronic engineering 86, (2009) [10.1016/j.mee.2009.01.054]  GO

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A nonvolatile memory with resistively switching methyl-silsesquioxane
IEEE Electron Device Letters 30, 8 - 10 (2009) [10.1109/LED.2008.2008108]  GO

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Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells
Journal of applied physics 106, 114507 (2009) [10.1063/1.3267485]  GO

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Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
Journal of applied physics 105, 066104 (2009) [10.1063/1.3100209]  GO

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A simulation model of resistive switching in electroechemical metallization memory cells
MRS online proceedings library 1160, 101 (2009)  GO

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Nano-scale chemical and structural segregation induced in surface layer of NaNbO3 crystals with thermal treatment at oxidising conditions studied by XPS, AFM, XRD, and electric properties tests
Phase transitions 82, 662 - 682 (2009) [10.1080/01411590903341155]  GO

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Insulator-semiconductor-metallic state transition induced by electric fields in Mn-doped NaNbO3
Physica status solidi / Rapid research letters 3, 127 - 129 (2009) [10.1002/pssr.200903052]  GO

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Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer
IEEE Electron Device Letters 30, 620 - 622 (2009) [10.1109/LED.2009.2020521]  GO

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Structural ordering of omega-ferrocenylalkanethiol monolayers on Au(111) studied by scanning tunneling microscopy
Surface science 603, 716 - 722 (2009) [10.1016/j.susc.2009.01.013]  GO

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Field Emission Resonances at Tip/alpha, omega-Mercaptoalkyl-ferrocene/Au Interfaces Studied by STM
Small 5, 496 - 502 (2009) [10.1002/smll.200800802]  GO

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Characterization of dye molecules and carbon nanostructures by tip-enhanced Raman spectroscopy
Physica status solidi / B 246, (2009) [10.1002/pssb.200982278]  GO

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Electrical properties of Pt interconnects for passive crossbar memory arrays
Microelectronic engineering 86, 2275 - 2278 (2009) [10.1016/j.mee.2009.04.004]  GO

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Electrode kinetics of Cu-SiO2-based resistive switching cells: overcoming the voltage-time dilemma of electrochemical metallization memories
Applied physics letters 94, 072109 (2009) [10.1063/1.3077310]  GO

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Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells
Physical Chemistry Chemical Physics 11, (2009) [10.1039/b901026b]  GO

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Integration of \"GexSe1-x\" in crossbar arrays for non-volatile memory applications
Microelectronic engineering 86, 1054 - 1056 (2009) [10.1016/j.mee.2009.01.010]  GO

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Reliability analysis of the low resistance state stability of Ge_0.3Se_0.7 based solid electrolyte nonvolatile memory cells
Applied physics letters 94, 123503 (2009) [10.1063/1.3103555]  GO

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Josephson tunnel junctions with ferromagnetic Fe0.75Co0.25 barriers
Journal of applied physics 42, 075005 (2009) [10.1088/0022-3727/42/7/075005]  GO

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Structural and chemical characterization of TiO2 memristive devices by spatially-resolved NEXAFS
Nanotechnology 20, 485701 (2009) [10.1088/0957-4484/20/48/485701]  GO

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Investigation of the reliability behavior of conductive-bridging memory cells
IEEE Electron Device Letters 30, 876 - 878 (2009) [10.1109/LED.2009.2024623]  GO

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Self-neutralization via electroreduction in photoemission from SrTiO3 single crystals
Applied physics / A 97, 449 - 454 (2009) [10.1007/s00339-009-5240-0]  GO


Resistive non-volatile memory devices
Microelectronic engineering 86, (2009) [10.1016/j.mee.2009.03.132]  GO


Emerging non-volatile memories by exploiting redox reactions on the nanoscale
ECS transactions 25, 441 - 446 (2009) [10.1149/1.3203981]  GO

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Redox-based resistive switching memories - nanoionic mechanisms, prospects and challenges
Advanced materials 21, (2009) [10.1002/adma.200900375]  GO

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Electrochemical reactions in nanoionics - towards future resistive switching memories
Journal of the Electrochemical Society 25, 431 - 437 (2009) [10.1149/1.3206642]  GO


Josephson Junctions with Centred Step and Local Variation of Critical Current Density
IEEE transactions on applied superconductivity 19, 689 - 692 (2009) [10.1109/TASC.2009.2019049]  GO

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Observation of Josephson coupling through an interlayer of antiferromagnetically ordered chromium
Physical review / B 80, 064508 (2009) [10.1103/PhysRevB.80.064508]  GO

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The influence of copper top electrode on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy
Applied physics letters 95, 013109 (2009) [10.1063/1.3167810]  GO

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Microemulsion mediated synthesis of BaTiO3-Ag nanocomposites
3, (2009)  GO

Sonstiges 2009

Contribution to a conference proceedings/Contribution to a book
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Fast resistive switching in WO3 thin films for non-volatile memory applications
Proceedings of the 9th IEEE Nanotechnology Conference, 2009, Genova, Switzerland. - S. 1102 - 1105 (2009)

Contribution to a conference proceedings/Contribution to a book
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A multilayer RRAM nanoarchitecture with resistively switching Ag-doped spin-on glass
Proceedings IEEE : International Conference on Ultamate Integration on Silicon (ULIS). - 2009. - S. 147 - 150 (2009)

Contribution to a conference proceedings/Contribution to a book
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Phenomenological considerations of resistively switching TiO2 in nano crossbar arrays
Proceedings of the 10th International Conference on Ultimate Itegration on Silicon, March 18-20, 2009, Aachen. - S. 135 - 138 (2009)

Contribution to a conference proceedings/Contribution to a book

Electrocrystallization
in: Encyclopedia of Electrochemical Power Sources, Vol. 2, Eds. J. Garche, C. Dyer, P. Moseley, Z. Ogumi, D. Rand and B. Scrosati, Elsevier, Amsterdam, (2009) 32-40 (2009)

Diploma Thesis

Schnelle Pulsmessungen an elektrochemischen Metallisierungsspeicherzellen
(2009)

Dissertation / PhD Thesis/Book

Resistive switching in Pt/TiO2/Pt
Schriften des Forschungszentrums Jülich : Information / Information 6, (2009)

Dissertation / PhD Thesis/Book

Entwicklung einer Nanotechnologie-Plattform für die Herstellung Crossbar-basierter Speicherarchitekturen
Schriften des Forschungszentrums Jülich : Schlüsseltechnologien / Key Technologies 12, (2009)

Dissertation / PhD Thesis/Book

Electromechanical force microscopy and tip-enhanced raman spectroscopy on polar oxide nanoparticles
Schriften des Forschungszentrums Jülich : Information / Information 7, (2009)

Dissertation / PhD Thesis

Template-Controlled Integration and Characterization of Bottom-Up Grown Ferroelectric Nanoislands
(2009)

Dissertation / PhD Thesis

Resistive Switching in Cu: TCNQ Thin Film Devices
(2009)

Dissertation / PhD Thesis

Investigation of the electroforming and resistive switching mechanisms in Fe-doped SrTiO3 thin films
(2009)

Dissertation / PhD Thesis

Resistive switching in electrochemical metallization memory cells
(2009)


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