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Referierte Zeitschriftenbeiträge 2013

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Electrical Characterization of 4-Mercaptophenylamine-Capped Nanoparticles in a Heterometallic Nanoelectrode Gap
The journal of physical chemistry / C 117(42), 22002 - 22009 (2013) [10.1021/jp405990y]  GO

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[Zr(NEtMe) 2 (guan-NEtMe) 2 ] as a Novel Atomic Layer Deposition Precursor: ZrO 2 Film Growth and Mechanistic Studies
Chemistry of materials 25(15), 3088 - 3095 (2013) [10.1021/cm401279v]  GO

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Chemical insight into electroforming of resistive switching manganite heterostructures
Nanoscale 5(9), 3954 - (2013) [10.1039/c3nr00106g]  GO

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Dysprosium-Doped (Ba,Sr)TiO 3 Thin Films on Nickel Foilsfor Capacitor Applications
Journal of the American Ceramic Society 96(4), 1228 - 1233 (2013) [10.1111/jace.12182]  GO

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Systematic chemical functionalization of hybrid molecule-surface interfaces
Physica status solidi / B 250(11), 2267-2274 (2013) [10.1002/pssb.201349076]  GO

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Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories
Scientific reports 3, 1169 (2013) [10.1038/srep01169]  GO

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Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells
Nanoscale 5(5), 1781-1784 (2013) [10.1039/c3nr34148h]  GO

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Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory
Advanced materials 24(33), 4552 - 4556 (2012) [10.1002/adma.201201499]  GO

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Memory cell based on a varphi Josephson junction
Applied physics letters 102, 242602 (2013) [10.1063/1.4811752]  GO

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Stoichiometry dependence and thermal stability of conducting NdGaO3/SrTiO3 heterointerfaces
Applied physics letters 102(7), 071601 (2013) [10.1063/1.4792509]  GO

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Atomic-scale measurement of structure and chemistry of a single-unit-cell layer of LaAlO3 embedded in SrTiO3
Microscopy and microanalysis 19(2), 310-318 (2013) [10.1017/S1431927612014407]  GO

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An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing
Nanoscale 5(11), 5119 - (2013) [10.1039/c3nr00535f]  GO

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Nonstoichiometry accommodation in SrTiO_{3} thin films studied by positron annihilation and electron microscopy
Physical review / B 87(19), 195409 (2013) [10.1103/PhysRevB.87.195409]  GO

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Detection of Fe2+ valence states in Fe doped SrTiO3 epitaxial thin films grown by pulsed laser deposition
Physical chemistry, chemical physics 15(21), 8311 - 8317 (2013) [10.1039/c3cp50272d]  GO

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Evidence for multifilamentary valence changes in resistive switching SrTiO3 devices detected by transmission X-ray microscopy
Applied physics letters 1(4), 042102 (2013) [10.1063/1.4822438]  GO

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X-ray absorption and resonant photoemission studies of Mn doped SrTiO3 epitaxial films
Radiation physics and chemistry 93, 123 - 128 (2013) [10.1016/j.radphyschem.2012.11.009]  GO

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Identification of screw dislocations as fast-forming sites in Fe-doped SrTiO3
Applied physics letters 102(18), 183504 - (2013) [10.1063/1.4804364]  GO

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Probing the oxygen vacancy distribution in resistive switching Fe-SrTiO3 metal-insulator-metal-structures by micro-x ray absorption near-edge structure
Journal of applied physics 111(7), 076101 - (2012) [10.1063/1.3699315]  GO

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Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations
Nanotechnology 23(30), 305205 - (2012) [10.1088/0957-4484/23/30/305205]  GO

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Electrical Transport through Single Nanoparticles and Nanoparticle Arrays
The journal of physical chemistry / C 116(39), 20657 - 20665 (2012) [10.1021/jp3020029]  GO

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Switching kinetics of electrochemical metallization memory cells
Physical chemistry, chemical physics 15(18), 6945-6952 (2013) [10.1039/c3cp50738f]  GO

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Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells
Nanoscale 5(22), 11003 - (2013) [10.1039/c3nr03387b]  GO

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Structural and compositional characterization of ultrathin titanium oxide films grown on Pt 3 Ti(111)
Journal of physics / Condensed matter 25(4), 045013 - (2013) [10.1088/0953-8984/25/4/045013]  GO

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Structural stratification of Sr 1 −  x Ca x RuO 3 thin films: Influence of aging process
Physica status solidi / A 210(2), 239 - 254 (2013) [10.1002/pssa.201228217]  GO

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In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
Nature Communications 4, 2382 (2013) [10.1038/ncomms3382]  GO

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Growth and Crystallization of TiO 2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium
Chemistry of materials 25(15), 2934 - 2943 (2013) [10.1021/cm303703r]  GO

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Cluster-like resistive switching of SrTiO 3 :Nb surface layers
New journal of physics 15(10), 103017 - (2013) [10.1088/1367-2630/15/10/103017]  GO

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Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy
Applied physics letters 103(16), 162904 - (2013) [10.1063/1.4825367]  GO

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Insulator-to-metal transition of SrTiO3: Nb single crystal surfaces inducedby Ar+bombardment
Applied physics letters 102(10), 101603 (2013) [10.1063/1.4795611]  GO

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Quasi-two-dimensional conducting layer on TiO2 (110) introduced by sputtering as a template for resistive switching
Applied physics letters 102(13), 131604 - (2013) [10.1063/1.4801437]  GO

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Structure and thermoelectric properties of EuTi(O,N)3 ± δ
Journal of applied physics 114(3), 033701 - (2013) [10.1063/1.4813098]  GO

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Molecular dynamics simulations of oxygen vacancy diffusion in SrTiO 3
Journal of physics / Condensed matter 24(48), 485002 - (2012) [10.1088/0953-8984/24/48/485002]  GO

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Uniform Complementary Resistive Switching in Tantalum Oxide Using Current Sweeps
IEEE electron device letters 34(1), 114 - 116 (2013) [10.1109/LED.2012.2224634]  GO

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Tuning cationic composition of La:EuTiO3−δ films
APL materials 1, 052111 (2013) [10.1063/1.4831856]  GO

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Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes
Journal of applied physics 113(12), 124504 - (2013) [10.1063/1.4797488]  GO

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Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes
Nanoscale 5(24), 12598 - (2013) [10.1039/c3nr03993e]  GO

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Feasibility studies for filament detection in resistively switching SrTiO3 devices by employing grazing incidence small angle X-ray scattering
Journal of applied physics 113(6), 064509 (2013) [10.1063/1.4792035]  GO

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Detection of filament formation in forming-free resistive switching SrTiO3 devices with Ti top electrodes
Applied physics letters 100(22), 223503 - (2012) [10.1063/1.4724108]  GO

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Proton defects in BaTiO3: New aspects regarding the re-oxidation of dielectric materials fired in reducing atmospheres
Journal of the European Ceramic Society 33(15-16), 3007 - 3013 (2013) [10.1016/j.jeurceramsoc.2013.05.027]  GO

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Grain growth and crystallinity of ultrafine barium titanate particles prepared by various routes
Ceramics international 39(6), 6673 - 6680 (2013) [10.1016/j.ceramint.2013.01.105]  GO

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Nanobattery effect in RRAMs-implications on device stability and endurance
IEEE electron device letters 35, 208 (2013)  GO

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Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
ACS nano 7(7), 6396 - 6402 (2013) [10.1021/nn4026614]  GO

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Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch
AIP Advances 3(3), 032114 - (2013) [10.1063/1.4795140]  GO

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Nanobatteries in redox-based resistive switches require extension of memristor theory
Nature Communications 4, 1771 - (2013) [10.1038/ncomms2784]  GO

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Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte- Based ReRAM
Advanced materials 25(2), 162 - 164 (2013) [10.1002/adma.201202592]  GO

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Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures
Scientific reports 3, 2856 (2013) [10.1038/srep02856]  GO

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Preparation and characterization of GeSx thin-films for resistive switching memories
Thin solid films 527, 299 - 302 (2013) [10.1016/j.tsf.2012.12.032]  GO

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Redox-Based Resistive Switching Memories
Journal of nanoscience and nanotechnology 12(10), 7628 - 7640 (2012) [10.1166/jnn.2012.6652]  GO

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Electro-degradation and resisive switching of Fe-doped SrTiO3 single crystal
Journal of applied physics 113(8), 083713 (2013) [10.1063/1.4793632]  GO

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The thermal stability of Pt/Ir coated AFM tips for resistive switching measurements
Applied surface science 257(17), 7627 - 7632 (2011) [10.1016/j.apsusc.2011.03.149]  GO

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Resistive switching near electrode interfaces: Estimations by a current model
Journal of applied physics 113(5), 053716 - (2013) [10.1063/1.4789944]  GO


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