(leer)

Navigation und Service


Referierte Zeitschriftenbeiträge 2014

; ; ; ; ; ;
Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD Sr x Ti y O z films
Physica status solidi / A 211(2), 389 - 396 (2014) [10.1002/pssa.201330101]  GO

; ; ; ; ; ; ;
Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
Journal of applied physics 116(6), 064503 - (2014) [10.1063/1.4891831]  GO

; ; ; ; ; ;
Directed Immobilization of Janus-AuNP in Heterometallic Nanogaps: a Key Step Toward Integration of Functional Molecular Units in Nanoelectronics
The journal of physical chemistry / C 118(46), 27142 - 27149 (2014) [10.1021/jp5085179]  GO

; ; ; ; ;
Scanning Tunneling Microscopy Investigation of Ultrathin Titanium Oxide Films Grown on Pt 3 Ti(111)
The journal of physical chemistry / C 118(12), 6186 - 6192 (2014) [10.1021/jp4105213]  GO

; ; ;
Finite-size versus interface-proximity effects in thin-film epitaxial $SrTiO_3$
Physical review / B 89(24), 241401 (2014) [10.1103/PhysRevB.89.241401]  GO

; ; ;
Simulation and comparison of two sequential logic-in-memory approaches using a dynamic electrochemical metallization cell model
Microelectronics journal 45(11), 1416 - 1428 (2014) [10.1016/j.mejo.2014.09.012]  GO

; ; ;
Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO$_3$ Resistive Switching Memories
IEEE electron device letters 1, 1 - 1 (2014) [10.1109/LED.2014.2340016]  GO

; ; ; ; ; ; ; ;
Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices
Advanced materials 26(17), 2730 - 2735 (2014) [10.1002/adma.201304054]  GO

; ; ; ; ; ; ; ;
Understanding the role of single molecular ZnS precursors in the synthesis of In(Zn)P/ZnS nanocrystals
ACS applied materials & interfaces 6(20), 18233–18242 (2014) [10.1021/am504988j]  GO

; ; ; ; ; ; ;
Study of atomic layer deposited ZrO 2 and ZrO 2 /TiO 2 films for resistive switching application
Physica status solidi / A 211(2), 301 - 309 (2014) [10.1002/pssa.201330034]  GO

; ; ; ; ; ;
Differential Adsorption of Gold Nanoparticles to Gold/Palladium and Platinum Surfaces
Langmuir 30(2), 574 - 583 (2014) [10.1021/la404110y]  GO

; ; ; ; ;
Band alignment at memristive metal-oxide interfaces investigated by hard x-ray photoemission spectroscopy
Physical review / B 90(11), 115312 (2014) [10.1103/PhysRevB.90.115312]  GO

; ; ; ; ; ; ;
Insights into Nanoscale Electrochemical Reduction in a Memristive Oxide: the Role of Three-Phase Boundaries
Advanced functional materials 24(28), 4466 - 4472 (2014) [10.1002/adfm.201304233]  GO

; ; ; ; ; ; ; ; ; ; ;
Incommensurate antiferromagnetic order in the manifoldly-frustrated SrTb2O4 with transition temperature up to 4.28 K
Frontiers in Physics 2, 42 (2014) [10.3389/fphy.2014.00042]  GO

; ; ;
Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices
IEEE transactions on circuits and systems / 1 61(8), 2402 - 2410 (2014) [10.1109/TCSI.2014.2332261]  GO

;
On the SET/RESET current asymmetry in electrochemical metallization memory cells
Physica status solidi / Rapid research letters 2, n/a - n/a (2014) [10.1002/pssr.201308310]  GO

; ; ; ; ; ; ; ;
Do dislocations act as atomic autobahns for oxygen in the perovskite oxide SrTiO$_{3}$?
Nanoscale 6(21), 12864 - 12876 (2014) [10.1039/C4NR04083J]  GO

; ; ; ; ; ;
Live demonstration: An associative capacitive network based on nanoscale complementary resistive switches
2014 IEEE International Symposium on Circuits and Systems (ISCAS), Melbourne VIC, Australia, 6/1/2014 - 6/5/2014 Circuits and Systems 1, 439 (2014) [10.1109/ISCAS.2014.6865162]  GO

; ; ; ;
Fast mapping of inhomogeneities in the popular metallic perovskite Nb:SrTiO 3 by confocal Raman microscopy
Physica status solidi / Rapid research letters 08(09), 781 - 784 (2014) [10.1002/pssr.201409221]  GO

; ; ; ; ;
Atomic Layer Deposition of Transparent VO $_{x}$ Thin Films for Resistive Switching Applications
Chemical vapor deposition 20(7-8-9), 291 - 297 (2014) [10.1002/cvde.201407122]  GO

; ; ; ; ; ; ; ;
Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions
Nature Communications 5, 5414 (2014) [10.1038/ncomms6414]  GO

; ; ; ;
Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
Applied physics letters 104(20), 202903 (2014) [10.1063/1.4879283]  GO

; ; ; ;
Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance
IEEE electron device letters 35(2), 208 - 210 (2014) [10.1109/LED.2013.2292113]  GO

; ;
Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories1
ChemElectroChem 1(8), 1287 - 1292 (2014) [10.1002/celc.201402106]  GO

; ; ; ; ;
(Keynote) Atomic Scale and Interface Interactions in Redox-Based Resistive Switching Memories
ECS transactions 64(14), 3 - 18 (2014) [10.1149/06414.0003ecst]  GO

; ; ; ; ; ; ;
Physical origins and suppression of Ag dissolution in GeS x -based ECM cells21
Physical chemistry, chemical physics 16(34), 18217-18225 (2014) [10.1039/C4CP01759E]  GO

; ; ; ;
Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
Nanotechnology 25(42), 425202 - (2014) [10.1088/0957-4484/25/42/425202]  GO

; ; ; ; ;
Impact of the interplay between nonstoichiometry and kinetic energy of the plume species on the growth mode of SrTiO 3 thin films
Journal of physics / D 47(3), 034009 - (2014) [10.1088/0022-3727/47/3/034009]  GO

; ; ; ;
Atomic Layer Deposition of TiO x /Al 2 O 3 Bilayer Structures for Resistive Switching Memory Applications
Chemical vapor deposition 20(7-8-9), 282 - 290 (2014) [10.1002/cvde.201407123]  GO


Servicemenü

Homepage