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In refereed journals 2011

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Memristive switches with two switching polarities in a forming free device structure
MRS online proceedings library 1337, mrss11-1337-q08-03 (2011) [10.1557/opl.2011.858]  GO

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Bipolar resistive switching in oxides: mechanisms and scaling
Current applied physics 11, E75 - E78 (2011) [10.1016/j.cap.2010.10.022]  GO

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Fine tuning of the electronic structure of n-conjugated molecules for molecular electronics
Nanotechnology 22, 145701 (2011) [10.1088/0957-4484/22/14/145701]  GO

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PbTiO3 nanoparticle precursors for chemical solution deposited electroceramic thin films
Journal of sol gel science and technology 57, 36 - 42 (2011) [10.1007/s10971-010-2321-7]  GO


Can we achieve significantly higher ionic conductivity in nanostructured zirconia?
Scripta materialia 65, 96 - 101 (2011) [.1016/j.scriptamat.2010.09.019]  GO

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Forming-free TiO2-based resistive switching devices on CMOS-compatible W-plugs
IEEE Electron Device Letters 32, 1588 - 1590 (2011) [10.1109/LED.2011.2166371]  GO

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Fast pulse analysis of TiO3 based RRAM nano-crossbar devices
2011 11th Non-Volatile Memory Technology Symposium (NVMTS 2011) November 7–9, 2011, Shanghai, China, Vol. 10 . - S. 1 - 4 (2011)

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Analysis of transient currents during ultrafast switching of TiO2 nanocrossbar devices
IEEE Electron Device Letters 32, 1116 - 1118 (2011) [10.1109/LED.2011.2156377]  GO

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Thermochemical resistive switching: materials, mechanisms, and scaling projections
Phase transitions 84, 570 - 602 (2011) [10.1080/01411594.2011.561478]  GO

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Local conductivity of epitaxial Fe-doped SrTiO3 thin films
Phase transitions 84, (2011) [10.1080/01411594.2010.551751]  GO


Control Molecule-based Transport for Future Molecular Devices
Journal of physics / Condensed matter 23, 013001 (2011) [10.1088/0953-8984/23/1/013001]  GO

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Relation between enhancement in growth and thickness-dependent crystallization in ALD TiO2 thin films
Journal of the Electrochemical Society 158, D6 - D9 (2011) [10.1149/1.3507258]  GO

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Single Electron Tunneling through a Tailored Arylthio-coronene
The journal of physical chemistry / C 115, 9204 - 9209 (2011) [10.1021/jp2018007]  GO

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Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM
Applied physics / A 102, S1 791 - 809 (2011) [10.1007/s00339-011-6287-2]  GO

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Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition
Journal of vacuum science & technology / A 29, 01AD01 (2011) [10.1116/1.3536487]  GO

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An EMF cell with a nitrogen solid electrolyte - on the transference of nitrogen ions in yttria-stabilized zirconia
Physical Chemistry Chemical Physics 13, 1239 - 1242 (2011) [10.1039/c003991h]  GO

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Identifying Molecular Orbital Energies by Distance-Dependent Transition Voltage Spectroscopy
The journal of physical chemistry / C 115, 15025 - 15030 (2011) [10.1021/jp204240n]  GO

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Dihydroxy (4-thiomorpholinomethyl) benzoic acids - From molecular asymmetry to diode characteristics
Langmuir 27, (2011) [10.1021/la201206e]  GO

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Spectroscopic study of the electric field induced valence change of Fe-defect centers in SrTiO(3)
Physical Chemistry Chemical Physics 13, 20779 - 20786 (2011) [10.1039/c1cp21973a]  GO

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Modeling complementary resistive switches by nonlinear memristive systems
Proceedings of the IEEE 11, 474 - 1478 (2011)  GO

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Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches
Advanced functional materials 21, 4487 - 4492 (2011) [10.1002/adfm.201101117]  GO

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Integration of perovskite oxide dielectrics into complementary metal-oxide-semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier
Journal of applied physics 110, 064117 (2011) [10.1063/1.3641636]  GO

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Comment on "Exponential ionic drift: fast switching and low volatility of thin-film memristors" by D.B. Strukov and R.S. Williams in Appl. Phys. A (2009) 94:515-519
Applied physics / A 105, (2011) [10.1007/s00339-011-6578-7]  GO

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Crossbar logic using bipolar and complementary resistive switches
IEEE Electron Device Letters 32, 710 - 712 (2011) [10.1109/LED.2011.2127439]  GO

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Integrated complementary resistive switches for passive high-density nanocrossbar arrays
IEEE Electron Device Letters 32, 191 - 193 (2011) [10.1109/LED.2010.2090127]  GO

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Complementary resistive switches (CRS): High speed performance for the application in passive nanocrossbar arrays
MRS online proceedings library 1337, 43 (2011)  GO

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Electroforming and Resistance Switching Characteristics of Silver-Doped MSQ With Inert Electrodes
IEEE transactions on applied superconductivity 10, 338 - 343 (2011) [10.1109/TNANO.2010.2041669]  GO

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Nanocomposite thin films for miniaturized multi-ayer ceramic capacitors prepared from barium titanate nanoparticle based hybrid solutions
Journal of materials chemistry 21, 7953 - 7965 (2011) [10.1039/c1jm10607d]  GO

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Resistive switching and changes in microstructure
Physica status solidi / A 208, 300 - 316 (2011) [10.1002/pssa.201026743]  GO

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On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices
Journal of applied physics 110, 054509 (2011) [10.1063/1.3631013]  GO

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Electronic structure of epitaxial Fe-doped SrTiO3 thin films
Phase transitions 84, (2011) [10.1080/01411594.2010.551806]  GO

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TiO2-a prototypical memristive material
Nanotechnology 22, 1 - 21 (2011) [10.1088/0957-4484/22/25/254001]  GO

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Proton Mobility in SiO2 Thin Films and Impact of Hydrogen and Humidity on the Resistive Switching Effect
MRS online proceedings library 1330, (2011) [10.1557/opl.2011.1198]  GO

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Capacity based nondestructive readout for complementary resistive switches
Nanotechnology 22, 395203 (2011) [10.1088/0957-4484/22/39/395203]  GO

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Redox Processes in Silicon Dioxide Thin Films using Copper Microelectrodes
Applied physics letters 99, 203103 (2011) [10.1063/1.3662013]  GO

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A Study of the Kinetics of the Electrochemical Deposition of Ce3+/Ce4+ Oxides
17, 167 - 172 (2011) [10.1007/978-94-007-0903-4_17]  GO

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Electrochemical activation of molecular nitrogen at the Ir/YSZ interface
Physical Chemistry Chemical Physics 13, 3394 - 3410 (2011) [10.1039/c0cp01024c]  GO

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Electrochemical metallization memories-fundamentals, applications, prospects
Nanotechnology 22, 254003 (2011) [10.1088/0957-4484/22/25/254003]  GO

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Die kleinsten Bits der Welt
Spektrum der Wissenschaft 1, 86 - 95 (2011)  GO

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NHC-based self-asssembled monolayers on solid gold substrates
Australian journal of chemistry 64, 1177 (2011) [10.1071/CH11173]  GO

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Spark plasma sintering of nanocrystalline BaTiO3-powders: Consolidation behavior and dielectric characteristics
Journal of the European Ceramic Society 31, 1723 - 1731 (2011) [10.1016/j.jeurceramsoc.2011.03.035]  GO

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Synthesis, spark plasma sintering and electrical conduction mechanism in BaTi3-Cu composites
Journal of the European Ceramic Society 31, 773 - 782 (2011) [10.1016/j.jeurceramsoc.2010.11.012]  GO


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