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Blick in das memristive Bauelement
Solution for ReRAMs with Long-Term Stability
Jülich, 19 October 2015 – They are many times faster than flash memories and require significantly less energy: ReRAM memories could revolutionize computer technology in the next few years. However, memristive memory cells are still too error-prone for many applications. A team of researchers from Jülich and Aachen have now discovered how storage cells that rapidly lose data can be distinguished microscopically from those with long-term stability.
More: Solution for ReRAMs with Long-Term Stability …

Events

Spring School 2016 Aufmacher
Feb
22
47th IFF Spring School - Memristive Phenomena: From Fundamental Physics to Neuromorphic Computing
Memristive phenomena combine the functionalities of electronic resistance and data memory in solid-state elements, which are able to change their resistance as a result of electrical stimulation in a non-volatile fashion.
More: 47th IFF Spring School - Memristive Phenomena: From Fundamental Physics to Neuromorphic Computing …

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New concepts in information technology. JARA_FIT

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Computer simulation with high-performance computers. JARA_HPC

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EMRL

Electronic Materials Research Lab (EMRL) consits of IWE II at RWTH Aachen and IEM at Forschungszentrum Jülich. EMRL


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