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Zeitschriftenbeiträge 2006

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Band alignment between (100) Si and amorphous LaAlO3,LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces
Applied physics letters 88, 032104 (2006) [10.1063/1.2164432]  GO

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Signal enhancement techniques for rf SQUID based magnetic imaging systems
Superconductor science and technology 19, 821 - 824 (2006) [10.1088/0953-2048/19/8/023]  GO

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Front-end Assembly Optimization for High-Tcrf-SQUID based Magnetic Field Imaging Systems
Journal of physics / Conference Series 43, 1239 - 1242 (2006) [10.1088/1742-6596/43/1/302]  GO

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Formation of zinc-oxide nanoparticles in SiO2 by ion implantation combined with thermal oxidation
Nuclear instruments & methods in physics research / B 242, (2006) [10.1016/j.nimb.2005.08.019]  GO

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Concentration profiles of Zn ions implanted with 60 keV for nanoparticle formation in silica glass
Vacuum 80, 802 - 805 (2006) [10.1016/j.vacuum.2005.11.010]  GO

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Atomic force microscopy and x-ray photoelectron spectroscopy studies of ZnO nanoparticles on Si2O fabricated by ion implantation and thermal oxidation
Applied physics letters 89, 023115 (2006) [10.1063/1.2221507]  GO

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Luminescence from ZnO nanoparticles/SiO2 fabricated by ion implantation and thermal oxidation
Physica / B 376-377, 760 - 763 (2006) [10.1016/j.physb.2005.12.190]  GO

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Zn and ZnO nanoparticles fabricated by ion implantation combined with thermal oxidation, and the defect-free luminescence
Applied physics letters 88, 153119 (2006) [10.1063/1.2193327]  GO

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Formation processes of zinc-oxide nanoparticles by ion implantation combined with thermal oxidation
Journal of crystal growth 287, 2 - 6 (2006) [10.1016/j.crysgro.2005.10.032]  GO

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HRTEM investigation of the epitaxial growth of scandate/titane multilayers
Journal of materials science 41, 4434 - 4439 (2006) [10.1007/s10853-006-0083-y]  GO

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Superconductivity Transition Dependence of the Thermal Crosstalk in YBa2Cu3O7-x Edge-Transition Bolometer Arrays
IEEE transactions on applied superconductivity 16, 9 - 14 (2006) [10.1109/TASC.2005.861040]  GO

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Analytical modelling of the interpixel thermal crosstalk in superconducting edge-transition bolometer arrays
Superconductor science and technology 19, 606 - 611 (2006) [10.1088/0953-2048/19/6/032]  GO

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Electrical-contact-free readout of the response of superconductive bolometer arrays using thermal cross talk
Applied optics 45, 7235 - 7238 (2006) [10.1364/AO.45.007235]  GO

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Feasibility of Electrical-Contact Free Measurement of the Response of Superconductive Bolometer Arrays Using the Thermal Crosstalk
Journal of physics / Conference Series 43, 1290 - 1293 (2006) [10.1088/1742-6596/43/1/315]  GO

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Substrate and device pattern dependence of the thermal crosstalk in YBa2Cu3O7-delta transition edge bolometer arrays
IEEE transactions on applied superconductivity 16(4), 1953 - 1958 (2006) [10.1109/TASC.2006.881820]  GO

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Growth of strained Si on He ion implanted Si/SiGe heterostructures
Solid state electronics 50, 32 - 37 (2006) [10.1016/j.sse.2005.10.042]  GO

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Anisotropic FMR-linewidth of triple-domain Fe layers on hexagonal GaN(0001)
Physica status solidi / A 203, 1567 - 1572 (2006) [10.1002/pssa.200563130]  GO

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Terahertz photonic mixers as local oscillators for hot electron bolometer and superconductor-insulator-superconductor astronomical receivers
Journal of applied physics 100, 043116-1 - 043116-4 (2006) [10.1063/1.2336486]  GO

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Defect Distribution along Single GaN Nanowhiskers
Nano letters 6, 1548 - 1551 (2006) [10.1021/nl060332n]  GO

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Optical properties of Cu implanted ZnO
Nuclear instruments & methods in physics research / B 249, (2006) [10.1016/j.nimb.2006.03.189]  GO

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The effect of carrier gas on GaN epilayer characteristics
Physica status solidi / C 3, 1408 - 1411 (2006) [10.1002/pssc.200565121]  GO

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Thermal stability of amorphous LaScO3 films on silicon
Applied physics letters 89, 062902 (2006) [10.1063/1.2222302]  GO

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Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam depostition on silicon
Applied physics letters 88, 112907 (2006) [10.1063/1.2182019]  GO

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Fabrication and Characterisation of GaAs Gunn Diode Chips for Application at 77 Ghz in Automotive Instustry
Sensors 6, 349 - 360 (2006)  GO

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Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure
Physica status solidi / C 3, 4227 - 4230 (2006) [10.1002/pssc.200672848]  GO

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Rashba effect in InGaAs/InP parallel quantum wires
Applied physics letters 88, 032102 (2006) [10.1063/1.2165279]  GO

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Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structures
Physica / E 32, 333 - 336 (2006) [10.1016/j.physe.2005.12.134]  GO

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New method for the in situ determination of AlxGa1-xN composition in MOVPE by real-time optical reflectance
Physica status solidi / A 203, 1645 - 1649 (2006) [10.1002/pssa.200565313]  GO

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Observation of growth during the MOVPE of III-nitrides
. Journal de physique / 4 132, 177 - 183 (2006) [10.1051/jp4:2006132034]  GO

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Growth and properties of epitaxial rare-earth scandate thin films
Applied physics / A 83, 103 - 106 (2006) [10.1007/s00339-005-3463-2]  GO

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Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs
Physica status solidi / A 203, 1876 - 1881 (2006) [10.1002/pssa.200565249]  GO

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Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation
Nuclear instruments & methods in physics research / B 242, 568 - 571 (2006) [10.1016/j.nimb.2005.08.071]  GO

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Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures
Physical review / B 74, 113310 - 133313 (2006) [10.1103/PhysRevB.74.113310]  GO

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Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures
Virtual journal of nanoscale science & technology 14, 15 (2006)  GO


Simulation of electronic transport in nanoscale ferroelectric tunnel junctions
. Verhandlungen der Deutschen Physikalischen Gesellschaft 41, DF1.10 (2006)  GO

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Tailoring the orientations of complex niobate films on perovskite substrates
Acta materialia 54, 2383 - 2391 (2006) [10.1016/j.actamat.2006.01.011]  GO

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On the Performance of Single-Gated Ultrathin-Body SOI Schottky-Barrier MOSFETs
IEEE Transactions on Electron Devices 53, 1669 - 1674 (2006) [10.1109/TED.2006.877262]  GO

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Growth and characterization of high density stoichiometric SiO2 dot arrays on Si through an anodic porous alumina template
Nanotechnology 17, 2146 - 2151 (2006) [10.1088/0957-4484/17/9/011]  GO

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Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors
Semiconductor science and technology 21, 67 - 71 (2006) [10.1088/0268-1242/21/1/012]  GO

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Low-Frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes
Nano letters 6, 930 - 936 (2006) [10.1021/nl052528d]  GO

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Amorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric
Applied physics letters 89, 222902 (2006) [10.1063/1.2393156]  GO

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From thin relaxed SiGe buffer layers to Strained Silicon directly on Oxide
ECS transactions 3, 1047 - 1055 (2006)  GO

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An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure
Physica status solidi / C 3, 2261 - 2264 (2006) [10.1002/pssc.200565127]  GO

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Comparison of AlGaN/GaN MSM Varactor Diodes Based on HFET and MOSHFET Layer Structures
IEEE Electron Device Letters 27, 945 - 947 (2006) [10.1109/LED.2006.886705]  GO

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Origin of Improved RF Performance of AlGaN/GaN MOSHFETs Compared to HFETs
IEEE Transactions on Electron Devices 53, 1517 - 1523 (2006) [10.1109/TED.2006.875819]  GO

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GaN-nanowhiskers: MBE-growth conditions and optical proberties
Journal of crystal growth 289, 381 - 386 (2006) [10.1016/j.jcrysgro.2005.11.117]  GO

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Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices 53, 2932 - 2941 (2006) [10.1109/TED.2006.885681]  GO

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Growth of CaxBa1-xNb2O6 thin films on MgO(100) by pulsed laser deposition
Journal of crystal growth 291, 243 - 248 (2006) [10.1016/j.jcrysgro.2006.02.039]  GO

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GaAs photodetectors prepared by high-energy and higt-dose nitrogen implantation
Applied physics letters 89, 091103 (2006) [10.1063/1.2339907]  GO

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Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs
Applied physics letters 89, 071103 (2006) [10.1063/1.2337523]  GO

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Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs
Applied physics letters 88, 041118 (2006) [10.1063/1.2168250]  GO

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Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs
IEEE photonics technology letters 18, 820 - 822 (2006) [10.1109/LPT.2006.871696]  GO

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Raman scattering study of GaN nanostructures obtained by bottom-up and top-down approaches
Journal of physics / Condensed matter 18, 5825 - 5834 (2006) [10.1088/0953-8984/18/26/003]  GO

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Surface enhanced Raman scattering by GaN nanocolumns
Physica status solidi / C 3, 2065 - 2068 (2006) [10.1002/pssc.200565148]  GO

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Characterization of Si and SiGe with different strain by spectroscopic ellipsometry
. Verhandlungen der Deutschen Physikalischen Gesellschaft 41, DS18.1 (2006)  GO

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Electrical conductivity of epitaxial SrTiO3 thin films as a function of oxygen partial pressure and temperature
Journal of the American Ceramic Society 89, 2845 (2006) [10.1111/j.1551-2916.2006.01178.x]  GO

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sSOI fabrication by wafer bonding and layer splitting of thin SiGe virtual substrates
Materials science and engineering / B 135, 231 - 234 (2006) [10.1016/j.mseb.2006.08.025]  GO

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Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition
Applied physics letters 89, 012902 (2006) [10.1063/1.2216102]  GO

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Suppression of weak antilocalization in GaxIn1-xAs/InP narrow quantum wires
Physical review / B 74, 081301 (2006) [10.1103/PhysRevB.74.081301]  GO

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Spin-orbit coupling in gated AlGaN/GaN 2-dimensional electron gases
Physica status solidi / C 3, 4247 - 4250 (2006) [10.1002/pssc.200672807]  GO

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The set-up of a high temperature superconductor radio-frequency SQUID microscope for magnetic nanoparticle detection
Superconductor science and technology 19, s261 - s265 (2006) [10.1088/0953-2048/19/5/S20]  GO

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Determination of the doping concentration profile in Si delta-doped GaAs layers using micro-Raman spectroscopy of bevelled structures
Thin solid films 506-507, (2006) [10.1016/j.tsf.2005.08.015]  GO

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MBE growth optimization of InN nanowires
Journal of crystal growth 290, 241 - 247 (2006) [10.1016/j.jcrysgro.2005.12.106]  GO

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Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires
Nano letters 6, 1541 - 1547 (2006) [10.1021/nl060547x]  GO

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Ge dots embedded in SiO2 obtained by oxidation of Si/Ge/Si nanostructures
Nanotechnology 17, 4912 - 4916 (2006) [10.1088/0957-4484/17/19/022]  GO

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Weak antilocalization in gate-controlled Al/sub x/Ga/sub 1-x/N/GaN two-dimensional electron gases
Physical review / B 73, 241311-1 - 241311-4 (2006) [10.1103/PhysRevB.73.241311]  GO

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Weak antilocalization in a polarization-doped AlxGa1-xN/GaN heterostructure with single subband occupation
Applied physics letters 88, 022111 (2006) [10.1063/1.2162871]  GO

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The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements
Nano letters 6, 704 - 708 (2006) [10.1021/nl052456q]  GO

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Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition
Applied physics letters 89, 232902 (2006) [10.1063/1.2402121]  GO

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Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation
Applied physics letters 88, 172901 (2006) [10.1063/1.2198103]  GO

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Preparation and characterization of rare earth scandates as alternative gate oxide materials
Solid state electronics 50, 58 - 62 (2006) [10.1016/j.sse.2005.10.036]  GO

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Ohmic contacts for GaAs based nanocolumns
Physica status solidi / A 203, 3559 - 3564 (2006) [10.1002/pssa.200622484]  GO

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Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETs
Solid state electronics 50, 594 - 600 (2006) [10.1016/j.sse.2006.03.016]  GO

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Foetal magnetocardiogrphy with a multi-channel HTS rf SQUID gradiometer
Superconductor science and technology 19, s266 - s270 (2006) [10.1088/0953-2048/19/5/S21]  GO

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Thermal stability of CoSi2 layers implemented in a silicon-on-insulator substrate
Semiconductor science and technology 21, 157 - 161 (2006) [10.1088/0268-1242/21/2/010]  GO

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Different approaches to integrate patterned buried CoSi2 layers in SOI substrates
Microelectronic engineering 83, (2006) [10.1016/j.mee.2006.09.015]  GO

Dissertaionen 2006

Diplomarbeiten 2006

Proceedings Buchartikel 2006


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