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Zeitschriftenbeiträge 2008

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Spin-splitting analysis of a two-dimensional electron gas in an almost strain-free In0.89Ga0.11Sb/In0.88Al0.12Sb by magneto-resistance measurements
Physical review / B 77, 205320-1 - 205320-6 (2008) [10.1103/PhysRevB.77.205320]  GO

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InxGa1-xAs/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics
Journal of crystal growth 310, 4821 - 4825 (2008) [10.1016/j.jcrysgro.2008.07.020]  GO

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Fluence-dependent formation of Zn and ZnO nanoparticles by ion implantation and thermal oxidation: An attempt to control nanoparticle size
Journal of applied physics 104, 114309 (2008) [10.1063/1.3014032]  GO

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Critical thickness of high structural quality SrTi03 films grown on orthorhombic (101) DySc03
Journal of applied physics 104, 114109 (2008) [10.1063/1.3037216]  GO

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Phase-coherent transport in InN nanowires of various sizes
Physical review / B 77, 201301 (2008) [10.1103/PhysRevB.77.201301]  GO

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Temperature-dependence of the phase-coherence length in InN nanowires
Applied physics letters 92, (2008) [10.1063/1.2905268]  GO

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High-k dielectric layers for bioelectronic applications
IEICE transactions / E / C E91-C, 1894 - 1898 (2008) [10.1093/ietele/e91-c.12.1894]  GO

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Microstructure of high-k dielectric LaLu03 films on (001) SrTi03 Substrates
Thin solid films 517, 631 - 634 (2008) [10.1016/j.tsf.2008.07.015]  GO

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Self-assembled growth of GaN nanowires
Journal of physics / Conference Series 126, 12026 (2008) [10.1088/1742-6596/126/1/012026]  GO

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SmScO3 thin films as an alternative gate dielectric
Applied physics letters 93, 052902-1 - 052902-3 (2008) [10.1063/1.2968660]  GO

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Acoustic charge transport in GaN nanowires
Nanotechnology 19, 275708 (2008) [10.1088/0957-4484/19/27/275708]  GO

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Fabrication of uniaxially strained silicon nanowires
Thin solid films 517, (2008) [10.1016/j.tsf.2008.08.141]  GO

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Ultra flexible SiGe/Si/Cr nanosprings
Microelectronics Journal 39, 478 - 481 (2008) [10.1016/j.mejo.2007.07.089]  GO

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On the magnetic properties of Gd implanted GaN
Journal of applied physics 103, 07D107-1 (2008) [10.1063/1.2830644]  GO

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Optical band gap of BiFe03 grown by adsorption-controlled molecular-beam epitaxy
Applied physics letters 92, 142908 (2008) [10.1063/1.2901160]  GO

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Many-body approach to the terahertz response of Wigner molecules in gated nanowire structures
Physical review / B 77, 125436 (2008) [10.1103/PhysRevB.77.125436]  GO

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Nanoscale charge transport measurements using a double-tip scanning tunneling microscope
Journal of applied physics 104, 094307 (2008) [10.1063/1.3006891]  GO

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Fibre-coupled terahertz transceiver head
Electronics letters 44, 1474 - 1475 (2008) [10.1049/e1:20083017]  GO

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Low noise SQUID Based NDE with Non-magnetic scanning system in unshielded environment
. Journal of physics / Conference Series 97, 012064 (2008) [10.1088/1742-6596/97/1/012064]  GO

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High-Power Monolithic Two-Mode DFB Laser Diodes for the Generation of THz Radiation
IEEE journal of selected topics in quantum electronics 14, 289 - 294 (2008) [10.1109/JSTQE.2007.913119]  GO

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Effect of the Nano-Structure Cu-Carbon Composite Absorber Layer on the Response of Superconductive
Journal of physics / Conference Series 129, 012044 (2008) [10.1088/1742-6596/129/1/012044]  GO

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Linear and nonlinear optical constants of BiFe03
Applied physics letters 92, 121915 (2008) [10.1063/1.2901168]  GO

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Mechanism of mobility increase of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma irradiation
Journal of applied physics 103, 083707 (2008) [10.1063/1.2903144]  GO

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Field-induced soft mode hardening in SrTi03/DySc03 multilayers
Applied physics letters 93, 052910-1 - 052910-3 (2008) [10.1063/1.2967336]  GO

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Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings
Journal of applied physics 104, 044908 (2008) [10.1063/1.2968462]  GO

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Atomic structure of the interface between SrTi03 thin films and Si(001) substrates
Applied physics letters 93, 101913 (2008) [10.1063/1.2981524]  GO

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Sensitivity Enhancement of Metal-Semiconductor-Metal Photodetectors on Low-Temperature-Grown GaAs using Alloyed Contacts
IEEE photonics technology letters 20, 1054 - 1056 (2008) [10.1109/LPT.2008.924184]  GO

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Detectivity of YBCO transition edge bolometer: modulation freguency, bias current and absorber effects
. Journal of physics / Conference Series 97, 012009 (2008) [10.1088/1742-6596/97/1/012009]  GO

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Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation
Materials science and engineering / C 154-155, 168 - 171 (2008) [10.1016/j.mseb.2008.09.037]  GO

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Wedgelike ultrathin epitaxial BaTiO3 films for studies of scaling effects in ferroelectrics
Applied physics letters 93, 072902 (2008) [10.1063/1.2972135]  GO

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Investigation on Localized States in GaN Nanowires
ACS nano 2, 287 - 292 (2008) [10.1021/nn700386w]  GO

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Strained Silicon on Wafer Level by Wafer Bonding: Materials Processing, Strain Measurements and Strain Relaxation
ECS transactions 16, 311 (2008) [10.1149/1.2982883]  GO

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Flux Quantisation Effects in InN Nanowires
Nano letters 8, 2834 - 2838 (2008) [10.1021/nl8014389]  GO

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Doping Concentration of GaN Nanowires Determined by Opto-Electrical Measurements
Nano letters 8, 3056 - 3059 (2008) [10.1021/nl8014395]  GO

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Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric
Thin solid films 517, 201 - 203 (2008) [10.1016/j.tsf.2008.08.064]  GO

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Generation and electrical contacting of gold quantum dots
Colloid and Polymer Science 286, 1029 - 1037 (2008) [10.1007/s00396-008-1866-2]  GO

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Characterization of epitaxial lanthanum lutetium oxide thin films prepared by pulsed-laser deposition as an alternative gate dielectric
Applied physics / A 90, 577 - 579 (2008) [10.1007/s00339-007-4327-8]  GO

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Photoconductivity of Hf-based binary metal oxides
Journal of applied physics 104, 114103-1 - 114103-6 (2008) [10.1063/1.3020520]  GO

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Photoconductivity of Hf-based binary metal oxides
Microelectronic engineering 85, 2400 - 2402 (2008) [10.1016/j.mee.2008.09.016]  GO

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Interface and Wetting Layer Effect on the Catalyst-Free Growth of GaN Nanowires
Small 4, 751 - 754 (2008) [10.1002/smll.200700936]  GO

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Adsorption-controlled growth of EuO by molecular-beam epitaxy
Applied physics letters 93, 102105 (2008) [10.1063/1.2973180]  GO

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Impact of the contact metallization on the performance of photoconductive THz antennas
Optics express 16, 19695 - 19705 (2008) [10.1364/OE.16.019695]  GO

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Spin dynamics triggered by subterahertz magnetic field pulses
Journal of applied physics 103, 123905 (2008) [10.1063/1.2940734]  GO

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Continuous wave terahertz spectrometer as a noncontact thickness measuring device
Applied optics 47, 3023 - 3026 (2008) [10.1364/AO.47.003023]  GO

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Modulation-doped SixGe1-x/Si shells electrically isolated from conductive substrates
Semiconductor science and technology 23, 105007 (2008) [10.1088/0268-1242/23/10/105007]  GO

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Threshold Voltage Variation in SOI Schottky-Barrier MOSFETs
IEEE Transactions on Electron Devices 55, 858 - 865 (2008) [10.1109/TED.2007.915054]  GO

Dissertationen 2008


Seltenerd-basierte ternäre Oxide als alternative Gatedielektrika
Schriften des Forschungszentrums Jülich : Information / Information 3, (2008)

Diplomarbeiten 2008

Beiträge in Büchern 2008


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