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Zeitschriftenbeiträge 2010

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Strain-enhanced electron mobility anisotropy in InxGa1-xAs/InP two-dimensional electron gases
Physica / E 42, 1130 - 1133 (2010) [10.1016/j.physe.2009.11.039]  GO

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Universal conductance fluctuations and localization effects in InN nanowires connected in parallel
Journal of applied physics 108, 113704 (2010) [10.1063/1.3516216]  GO

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Melting of Zn nanoparticles embedded in SiO2 at high temperatures: Effects on surface plasmon resonances
Applied physics letters 96, 023110 (2010) [10.1063/1.3290984]  GO

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pH-sensitive properties of barium strontium titanate (BST) thin films prepared by pulsed laser deposition technique
Physica status solidi / A 207, 824 - 830 (2010) [10.1002/pssa.200983310]  GO

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Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP
Applied physics letters 96, 022904 (2010) [10.1063/1.3292217]  GO

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Electrical characterization of TbScO3/TiN gate stacks in MOS capacitors and MOSFETs on strained and unstrained SOI
ECS transactions 33, 195 - 202 (2010) [10.1149/1.3481606]  GO

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Spin-orbit coupling and phase coherence in InAs nanowires
Physical review / B 82, 235303 (2010) [10.1103/PhysRevB.82.235303]  GO

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Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation
Journal of applied physics 107, 044510-6 (2010) [10.1063/1.3284089]  GO

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Josephson supercurrent in Nb/InN-nanowire/Nb junctions
Applied physics letters 96, 132504 (2010) [10.1063/1.3377897]  GO

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Electrical Properties of LaLuO3/Si(100) Structures Prepared by Molecular Beam Deposition
ECS transactions 33, 221 - 227 (2010) [10.1149/1.3481609]  GO

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Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
Japanese journal of applied physics 49, 046504 (2010) [10.1143/JJAP.49.046504]  GO

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Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts
Nanotechnology 21, 105701 (2010) [10.1088/0957-4484/21/10/105701]  GO

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Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH
Journal of the Electrochemical Society 157, H643 - H646 (2010) [10.1149/1.3382944]  GO

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n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility
IEEE Electron Device Letters 31, 1083 - 1085 (2010) [10.1109/LED.2010.2058995]  GO

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Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon
IEEE Electron Device Letters 31, 350 - 352 (2010) [10.1109/LED.2010.2041028]  GO

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RF Performance of InAlN/GaN HFETs and MOSHFETs with fTxLG up to 21GHz*um
IEEE Electron Device Letters 31, 180 - 182 (2010) [10.1109/LED.2009.2038078]  GO

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A strong ferroelectric ferromagnet created by means of spin-lattice coupling
Nature 466, 954 - 958 (2010) [10.1038/nature09331]  GO

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Adsorption-controlled growth of BiMnO3 thin films by molecular-beam epitaxy
Applied physics letters 96, 262905 (2010) [10.1063/1.3457786]  GO

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Quantum transport in narrow-gap semiconductor nanocolumns
Physica status solidi / C 7, 386 - 389 (2010) [10.1002/pssc.200982506]  GO

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Charge Carrier Induced Increase of the Curie Temperature of EuO - Is there an Instrinsic Limit?
Physical review letters 105, 257206 (2010) [10.1103/PhysRevLett.105.257206]  GO

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InAIM/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAIN
Applied physics letters 97, 173505 (2010) [10.1063/1.3507885]  GO

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Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates
Semiconductor science and technology 25(7), 075001 (2010) [10.1088/0268-1242/25/7/075001]  GO

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Elastic strain and dopant activation in ion implanted strained Si nanowires
Journal of applied physics 108, 124908 (2010) [10.1063/1.3520665]  GO

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Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET
Thin solid films 518, 2565 - 2568 (2010) [10.1016/j.tsf.2009.09.155]  GO

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Rare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size
Journal of materials chemistry 20, 4207 - 4212 (2010) [10.1039/c0jm00363h]  GO

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Physicochemical and Electrical Properties of LaLuO3/Ge(100) Structures Submitted to Postdeposition Annealings
Electrochemical and solid-state letters 13, G37 - G39 (2010) [10.1149/1.3322517]  GO

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Self-Organized Si-Nanotransistors
Japanese journal of applied physics 49, 04DJ02 (2010) [10.1143/JJAP.49.04DJ02]  GO

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Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors
Applied physics letters 96, 013513 (2010) [10.1063/1.3275731]  GO

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Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction
Ultramicroscopy 110, 1255 - 1266 (2010) [10.1016/j.ultramic.2010.05.003]  GO

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FEM enhanced signal processing approach for pattern recognition in the SQUID based NDE system
Journal of physics / Conference Series 234, 042030 (2010) [10.1088/1742-6596/234/4/042030]  GO

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An Efficient Finite-Element Approach for the Modeling of Planar Double-D Excitation Coils and Flaws in SQUID NDE Systems
IEEE transactions on applied superconductivity 20, 76 - 81 (2010) [10.1109/TASC.2009.2039399]  GO

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Two-Dimensional Optical Control of Electron Spin Orientation by Linearly Polarized Light in InGaAs
Physical review letters 105, 246603 (2010) [10.1103/PhysRevLett.105.246603]  GO

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Titania-assisted electron-beam and synchrotron lithography
Nanotechnology 21, 315301 (2010) [10.1088/0957-4484/21/31/315301]  GO

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Electric field tuning of hard polar phonons in strained SrTiO3 films
Journal of applied physics 107, 124116 (2010) [10.1063/1.3447812]  GO

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MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires
Journal of crystal growth 312, 635 - 640 (2010) [10.1016/j.jcrysgro.2009.11.026]  GO

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Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots
... Journal of physics / Conference Series 245, 012034 (2010) [10.1088/1742-6596/245/1/012034]  GO

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Ferroelectricity in nonstoichiometric SrTiO3 films studied by ultraviolet Raman spectroscopy
Applied physics letters 97, 142901 (2010) [10.1063/1.3499273]  GO

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Liquid injection MOCVD grown binary oxides and ternary rare-earth oxide as alternate gate-oxides for logic devices
ECS transactions 33, 211 - 219 (2010) [10.1149/1.3481608]  GO

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Strain tensors in layer systems by precision ion channeling measurements
Journal of applied physics 107, 124906 (2010) [10.1063/1.3415530]  GO

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Simultaneous detection of cyanide and heavy metals for environmental analysis by means of µISEs
Physica status solidi / A 207, 817 - 823 (2010) [10.1002/pssa.200983303]  GO

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Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI
IEEE Electron Device Letters 31, 537 - 539 (2010) [10.1109/LED.2010.2045220]  GO

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Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI
Solid state electronics 54, 185 - 190 (2010) [10.1016/j.sse.2009.12.017]  GO

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Molecular properties of liquid crystals in the terahertz frequency range
Optics express 18, 6097 - 6107 (2010) [10.1364/OE.18.006097]  GO

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Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD
Vacuum 84, 170-173 (2010) [10.1016/j.vacuum.2009.05.017]  GO

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LaLuO3 as high-k gate dielectric for InAs nanowire structures
Semiconductor science and technology 25, 085001 (2010) [10.1088/0268-1242/25/8/085001]  GO

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Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric
Applied physics / A 100, 305 - 308 (2010) [10.1007/s00339-010-5804-z]  GO

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Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24
Journal of applied physics 107, 024106 (2010) [10.1063/1.3273388]  GO

Dissertationen 2010

Diplomarbeiten 2010

Beiträge in Büchern 2010


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