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Publications 2014

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High-field quasi-ballistic transport in AlGaN/GaN heterostructures.
Applied physics letters 104(7), 072105-1-5 (2014)  GO

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Impact of doped microcrystalline silicon oxide layers on crystalline silicon surface passivation
Canadian journal of physics 92(7/8), 758 - 762 (2014) [10.1139/cjp-2013-0627]  GO

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Selected nonapeptides in terahertz light
Optica applicata 44(1), 159-171 (2014) [10.5277/oa140114]  GO

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Flux periodic magnetoconductance oscillations in GaAs/InAs core/shell nanowires
Physical review / B 89(4), 045417 (2014) [10.1103/PhysRevB.89.045417]  GO

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Crossover from Josephson Effect to Single Interface Andreev Reflection in Asymmetric Superconductor/Nanowire Junctions
Nano letters 14, 4977-4981 (2014) [10.1021/nl501350v]  GO

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Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching
Nanotechnology 25(25), 255301 - (2014) [10.1088/0957-4484/25/25/255301]  GO

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Capacitively coupled electrolyte-conductivity sensor based on high-kmaterial of barium strontium titanate
Sensors and actuators / B 198, 102-109 (2014) [10.1016/j.snb.2014.02.103]  GO

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A study of the structural and magnetic properties of ZnO implanted by Gd ions
Nuclear instruments & methods in physics research / B 307, 1-5 (2014) [10.1016/j.nimb.2014.02.034]  GO

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Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures
Semiconductor science and technology 29(4), 045022 (2014) [10.1088/0268-1242/29/4/045022]  GO

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GeSn heterojunction LEDs on Si substrates
IEEE photonics technology letters 26(2), 187-189 (2014) [10.1109/LPT.2013.2291571]  GO

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Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown $Sb_2Te_3$- and $Bi_2Te_3$-Based Topological Insulators
Physical review letters 113(9), 096601 (2014) [10.1103/PhysRevLett.113.096601]  GO

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Crystallization of $HfO_2$ in $InAs/HfO_2$ core–shell nanowires
Nanotechnology 25(40), 405701 (2014) [10.1088/0957-4484/25/40/405701]  GO

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Crystal Phase Selective Growth in GaAs/InAs Core–Shell Nanowires
Crystal growth & design 14(3), 1167 - 1174 (2014) [10.1021/cg401667v]  GO

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Hexagonal GdScO 3 : an epitaxial high-κ dielectric for GaN
Semiconductor science and technology 29(7), 075005 (2014) [10.1088/0268-1242/29/7/075005]  GO

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Systematic study of terahertz response of SrTiO$_3$ based heterostructures: Influence of strain, temperature, and electric field
Physical review / B 89(21), 214116 (2014) [10.1103/PhysRevB.89.214116]  GO

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Epitaxial growth of VO2 by periodic annealing
Applied physics letters 104(6), 063104 - (2014) [10.1063/1.4864404]  GO

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The Role of Si during the Growth of GaN Micro- and Nanorods
Crystal growth & design 14(3), 1486–1492 (2014) [10.1021/cg500054w]  GO

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Quantum dots in InAs nanowires induced by surface potential fluctuations
Nanotechnology 25(13), 135203 (2014) [10.1088/0957-4484/25/13/135203]  GO

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Phase coherent transport in hollow InAs nanowires
Applied physics letters 105(11), 113111 - (2014) [10.1063/1.4896286]  GO

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Generation of circularly polarized radiation from a compact plasma-based extreme ultraviolet light source for tabletop X-ray magnetic circular dichroism studies
Review of scientific instruments 85(10), 103110 (2014) [10.1063/1.4897491]  GO

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Amphoteric Nature of Sn in CdS Nanowires
Nano letters 14(2), 518 - 523 (2014) [10.1021/nl4035169]  GO

PhD 2014


Carrier mobility in advanced channel materials using alternative gate dielectrics
Schriften des Forschungszentrums Jülich Reihe Information 31, 115 pp (2014)

Proceedings and book articels 2014


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