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AVD metal gate

The AVD reactor is equipped with a graphite susceptor. NH3 is running as the continuous reactive gas. So far metal organic precursor for Ta, Ti and Al are installed. The precursor delivery is similar to the ALD tool. The work function of the metal gates is tuned by interface engineering and composition of the layer or interlayers.


Source materials: Ti, Ta, Al, N
Process available: TiN, TaN, TayAl(1-y)N, AlN
Sample size: 20*20mm, wafers: 100mm, 200mm, 300mm

Aixtron-Cluster


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