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papers (reviewed) 2005

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Fabrication of ZnO nanoparticles in SiO2 by ion implantation combined with thermal oxidation
Applied physics letters 87, 013109-1 - 013109-3 (2005) [10.1063/1.1989442]  GO

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Comparing Carbon Nanotube Transistors - The Ideal Choice: A Novel Tunneling Device Design
IEEE Transactions on Electron Devices 52, 2568 (2005) [10.1109/TED.2005.859654]  GO

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SiO2/AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax/fT of 40/24 GHz
Electronics letters 41, 667 - 668 (2005) [10.1049/el:20050556]  GO

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Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs
Physica status solidi / C 2, 2676 - 2679 (2005) [10.1002/pssc.200461304]  GO

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Surface characterisation and interface studies of high-k materials by XPS and TOF-SIMS
Applied surface science 252, 172 - 176 (2005) [10.1016/j.apsusc.2005.02.028]  GO

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Wedge-shaped layers from porous silicon: the basics of laterally graded interference filters
Physica status solidi / A 202, 1437 - 1442 (2005) [10.1002/pssa.200461126]  GO

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Longitudinal photocurrent spectroscopy of a single GaAs/AlGaAs v-groove quantum wire
Nanotechnology 16, 307 - 311 (2005) [10.1088/0957-4484/16/2/023]  GO

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Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires
Nano letters 5, 981 - 984 (2005) [10.1021/nl0500306]  GO

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Epitaxial Growth of Fe on GaN(0001): Strucural and Magnetic Properties
Physica status solidi / A 202, 754 - 757 (2005) [10.1002/pssa.200461297]  GO

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Piezoresponse Force Microscopy for Imaging of GaN Surfaces
Physica status solidi / A 202, 785 - 789 (2005) [10.1002/pssa.200461298]  GO

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Shot noise of large charge quanta in superconductor/semiconductor/superconductor junctions
Physical review / B 71, 020506-1 - 020506-4 (2005) [10.1103/PhysRevB.71.020506]  GO

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Investigation of plasma hydrogenation and trapping mechanism for layer transfer
Applied physics letters 86, 031904-1 - 031904-3 (2005) [10.1063/1.1852087]  GO

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The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors
Nano letters 5, 1497 - 1502 (2005) [10.1021/nl0508624]  GO

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Registered deposition of nanoscale ferroelectric grains by template-controlled growth
Advanced materials 17, 1357 - 1361 (2005) [10.1002/adma.200401695]  GO

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Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs
Physica status solidi / C 2, 2619 - 2622 (2005) [10.1002/pssc.200461350]  GO

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Use of real time wafer temperature determination for the study of unintentional parameter influences in the MOVPE of nitrides
Physica status solidi / B 242, 2581 - 2586 (2005) [10.1002/pssb.200541099]  GO

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Uniform III-nitride growth in single wafer horizontal MOVPE reactors
Physica status solidi / A 202, 744 - 748 (2005) [10.1002/pssa.200461468]  GO

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Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates
Journal of applied physics 97, 104921 (2005) [10.1063/1.1915519]  GO

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Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic applications
Microelectronic engineering 80, 150 - 153 (2005) [10.1016/j.mee.2005.04.058]  GO

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Localized Electrochemical Oxidation of Thin Nb Films in Microscopic and Nanoscopic Dimensions
Surface science 597, 173 - 180 (2005) [10.1016/j.susc.2004.10.056]  GO

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High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors
Applied physics letters 87, 143501 (2005) [10.1063/1.2058206]  GO

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Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistors
Physical review / B 72, 125308 (2005) [10.1103/PhysRevB.72.125308]  GO

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Simulation of quantum dead-layers in nanoscale ferroelectric tunnel junctions
epl 72, 282 - 286 (2005) [10.1209/epl/i2005-10219-7]  GO

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Tailoring of epitaxial CoSi2/Si nanostructures by low temperature wet oxidation
Nanotechnology 16, 2718 - 2720 (2005) [10.1088/0957-4484/16/11/042]  GO

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Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures
Journal of vacuum science & technology / B 23, 76 - 79 (2005) [10.1116/1.1839898]  GO

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Magnetosubbands of semiconductor quantum wires with Rashba spin-orbit coupling
Physical review / B 71, 035311-1 - 035311-6 (2005) [10.1103/PhysRevB.71.035311]  GO

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Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
Solid state electronics 49, 73 - 76 (2005) [10.1016/j.sse.2004.07.002]  GO

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Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation
Applied physics letters 87, 263505 (2005) [10.1063/1.2150581]  GO

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High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities
IEEE transactions on nanotechnology 4, 481 - 489 (2005) [10.1109/TNANO.2005.851427]  GO

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Crack-free BaTiO3 films on Si with SiO2, MgO, or Al2O3 buffer layers
Journal of the Optical Society of America / B 22, 913 - 916 (2005) [10.1364/JOSAB.22.000913]  GO

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Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors
Physica status solidi / C 2, 2611 - 2614 (2005) [10.1002/pssc.200461325]  GO

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Ultrafast Phenomena in Freestanding LT-GaAs Devices
Acta physica Polonica / A 107, 109 - 117 (2005)  GO

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Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0001)
Journal of crystal growth 283, 500 (2005) [10.1016/j.jcrysgro.2005.06.004]  GO

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Heterostructures of BaTiO3 bilayer films grown on SrTiO3 (001) under different oxygen pressures
Journal of crystal growth 283, 425 - 430 (2005) [10.1016/j.jcrysgro.2005.06.032]  GO

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Large-area traveling-wave photonic mixers for increased continuous terahertz power
Applied physics letters 86, 111120 (2005) [10.1063/1.1884262]  GO

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Ultrafast Low-Temperature-Grown Epitaxial GaAs Photodetectors Transferred on Flexible Plastic Substrates
IEEE photonics technology letters 17, 1725 - 1727 (2005) [10.1109/LPT.2005.851025]  GO

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Photomixers fabricated on nitrogen-ion-implanted GaAs
Applied physics letters 87, 041106 (2005) [10.1063/1.2006983]  GO

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Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN
Applied physics letters 86, 211110-1 - 211110-3 (2005) [10.1063/1.1938004]  GO

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Growth and properties of GaN and AlN layers on silver substrates
Applied physics letters 87, 212109 (2005) [10.1063/1.2135879]  GO

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Measurement of overlay accuracy of E-Beam generated patterns for the fabrication of vertical gate all-around transostores
Verhandlungen der Deutschen Physikalischen Gesellschaft 40, 279 (2005)  GO

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High frequency investigation of graded gap injectors for GaAs Gunn diodes
Solid state electronics 49, 245 - 250 (2005) [10.1016/j.sse.2004.08.014]  GO

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Improved PbZr0.52Ti0.48O3 film quality on SrRuO3/SrTiO3 substrates
Journal of crystal growth 277, 210 - 217 (2005) [10.1016/j.jcrysgro.2004.12.137]  GO

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Nonlinear optical absorption of ZnO doped with copper nanoparticles in the picosecond and nanosecond pulse laser field
Applied optics 44, 2839 - 2845 (2005) [10.1364/AO.44.002839]  GO

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Principles of Electrochemical Nanotechnology and Their Application for Materials and Systems
Electrochimica acta 51, 775 - 786 (2005) [10.1016/j.electacta.2005.04.073]  GO

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Generation of continuous-wave terahertz radiation using a two-mode titanium sapphire laser containing an intracavity Fabry-Perot etalon
Journal of applied physics 97, 103108-1 - 103108-4 (2005) [10.1063/1.1904724]  GO

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Ferroelectric properties of epitaxial BaTiO3 thin films and heterostructures on different substrates
Journal of applied physics 98, 114101 (2005) [10.1063/1.2135891]  GO

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Resonant tunneling in nanocolumns improved by quantum collimation
Nano letters 5, 2470 - 2475 (2005) [10.1021/nl051781a]  GO

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Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation
Electronics letters 41, 1085 - 1086 (2005) [10.1049/el:20052665]  GO

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Multi-Channel HTS rf SQUID Gradiometer System Recording Fetal and Adult Magnetocardiograms
IEEE transactions on applied superconductivity 15, 631 - 634 (2005) [10.1109/TASC.2005.849974]  GO

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Ternary rare-earth metal oxide high-k layers on silicon oxide
Applied physics letters 86, 132903-1 - 132903-3 (2005) [10.1063/1.1886249]  GO

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Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation
Applied physics letters 86, 062109-1 - 062109-3 (2005) [10.1063/1.1861958]  GO

PhD 2005


Fabrication and Characterisation of AlGaN/GaN High Electron Mobility Transistors for Power Applications
(2005)


Fabrication and characterization of planar Gunn diodes for Monolithic Microwave Integrated Circuits
Schriften des Forschungszentrums Jülich . Reihe Informationstechnik / Information Technology 9, (2005)

Diploma thesis 2005

Diploma Thesis

Electrical Characterization of GaN Nano Columnar Structures
(2005)

Diploma Thesis

Vergleich der Oberflächendurchbruchspannung von LT-, n- und Sl-GaAs
(2005)

Diploma Thesis

Molekularstrahlepitaxie von GaN-Nanodrähten und deren Charakterisierung
(2005)

Diploma Thesis

Transportuntersuchungen an vertikalen resonanten Tunneldioden im Sub-100 Nanometer-Bereich
(2005)

Proceedings and book articels 2005


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