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papers (reviewed) 2007

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Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-K Dielectrics by Atomic Vapor Deposition
Chemical vapor deposition 13, 567 - 573 (2007) [10.1002/cvde.200705504]  GO

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Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3
Microelectronic engineering 84, 2278 - 2281 (2007) [10.1016/j.mee.2007.04.113]  GO

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Effect of rf Pumping Frequency and rf Input Power on the Flux to Voltage Transfer Function of rf-SQUIDs Applied Superconductivity
IEEE transactions on applied superconductivity 17, 676 - 679 (2007) [10.1109/TASC.2007.899840]  GO

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Annealing atmosphere effects on Zn nanoparticles in SiO2 and transformation to ZnO nanoparticles
Surface and coatings technology 201, (2007) [10.1016/j.surfcoat.2006.01.081]  GO

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Defect-band-free luminescence from ZnO nanoparticles fabricated by ion implantation and thermal oxidation
Nuclear instruments & methods in physics research / B 257, (2007) [10.1016/j.nimb.2006.12.151]  GO

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Embedment of ZnO nanoparticles in SiO2 by ion implantation and low-temperature oxidation
Applied physics letters 90, 083102 (2007) [10.1063/1.2709509]  GO

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Implantation-induced nonequilibrium reaction between Zn ions of 60 keV and SiO2 target
Applied physics letters 91, 063113-1 (2007) [10.1063/1.2768004]  GO

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1/f Noise in Carbon Nanotube Devices-On the Impact of Contacts and Device Geometry
IEEE transactions on nanotechnology 6, 368 - 373 (2007) [10.1109/TNANO.2007.892052]  GO

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Andreev reflection and strongly enhanced magnetoresistance oscillations in GaxIn1-xAs/InP heterostructures with superconducting contacts
Physical review / B 76, 115313 (2007) [10.1103/PhysRevB.76.115313]  GO

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Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers
Applied physics letters 90, 032108 (2007) [10.1063/1.2431702]  GO

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Suppression of weak antilocalization in AlxGa1-xN/GaN two-dimensional electron gas by an in-plane magnetic field
Physical review / B 75, 195329 (2007) [10.1103/PhysRevB.75.195329]  GO

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GaN and InN nanowires grown by MBE: a comparison
Applied physics / A 87, 499 - 503 (2007) [10.1007/s00339-007-3871-6]  GO

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Nucleation and growth of GaN nanowires on Si (111) performed by molecular beam epitaxy
Nano letters 7, 2248 - 2251 (2007) [10.1021/nl0707398]  GO

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Franz-Keldysh effect in GaN nanowires
Nano letters 7, 2166 (2007) [10.1021/nl070954o]  GO

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Optical properties of Tb implantation into ZnO
Surface and coatings technology 201, (2007) [10.1016/j.surfcoat.2006.02.066]  GO

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The growth mechanism of GaN with different H2/N2 carrier gas ratios
Journal of crystal growth 307, 6 - 13 (2007) [10.1016/j.jcrysgro.2007.05.058]  GO

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The growth of Cr-doped GaN by MOVPE towards spintronic applications
Physica status solidi / A 204, 72 - 77 (2007) [10.1002/pssa.200673016]  GO

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Ge quantum dot molecules and crystals: Preparation and properties
Surface science 601, 2787 - 2791 (2007) [10.1016/j.susc.2006.12.053]  GO

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Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)
Applied physics letters 90, 123117 (2007) [10.1063/1.2715119]  GO

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Hot electron injector Gunn diode for advanced driver assistance systems
Applied physics / A 87, 545 - 558 (2007) [10.1007/s00339-007-3872-5]  GO

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Weak antilocalization in high mobility GaxIn1-xAs/InP two-dimensional electron gases with strong spin-orbit coupling
Physical review / B 76, 165301 (2007) [10.1103/PhysRevB.76.165301]  GO

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Rashba effect in GaxIn1-xAs/InP quantum wire structures
Applied physics / A 87, 577 - 584 (2007) [10.1007/s00339-007-3899-7]  GO

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New approaches for growth control of GaN-based HEMT structures
Applied physics / A 87, 491 - 498 (2007) [10.1007/s00339-007-3933-9]  GO

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Epitaxially stabilized growth of orthorhombic LuScO3 thin films
Applied physics letters 90, 192901-1 - 192901-3 (2007) [10.1063/1.2737136]  GO

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Adsorption-controlled molecular-beam epitaxial growth of monodomain rhombohedral BiFe03 thin films
Applied physics letters 91, 071922 (2007) [10.1063/1.2767771]  GO

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Quantum point contact due to Fermi-level pinning and doping profiles in semiconductor nanocolumns
Applied physics / A 87, 559 - 562 (2007) [10.1007/s00339-007-3900-5]  GO

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Understanding Coulomb effects in nanoscale Schottky-barrier FETs
IEEE Transactions on Electron Devices 54, 1502 - 1509 (2007) [10.1109/TED.2007.895235]  GO

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Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy
Journal of crystal growth 304, 342 - 345 (2007) [10.1016/j.jcrysgro.2007.03.035]  GO

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Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique
Semiconductor science and technology 22, s212 - s215 (2007) [10.1088/0268-1242/22/1/S50]  GO

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Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
Solid state electronics 51, 572 - 578 (2007) [10.1016/j.sse.2007.02.001]  GO

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Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors
Applied physics / A 87, 351 - 357 (2007) [10.1007/s00339-007-3868-1]  GO

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Dopant segregation in SOI Schottky-barrier MOSFETs
Microelectronic engineering 84, 2563 (2007) [10.1016/j.mee.2007.05.047]  GO

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Performance optimization of GaAs-based photomixers as sources of THz radiation
Applied physics / A 87, 563 - 567 (2007) [10.1007/s00339-007-3909-9]  GO

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Highly tunable SrTiO3 thin film structures for applications in the terahertz range
Applied physics letters 91, 232911 (2007) [10.1063/1.2822409]  GO

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Enhanced spin-orbit scattering length in narrow AlxGa1-xN/GaN wires
Physical review / B 76, 205307-1 (2007) [10.1103/PhysRevB.76.205307]  GO

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Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate films prepared by molecular beam deposition
Journal of applied physics 101, 104109-1 - 104109 (2007) [10.1063/1.2735396]  GO

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La-based ternary rare-earth oxides as alternative high-k dielectrics
Microelectronic engineering 84, 1890 - 1893 (2007) [10.1016/j.mee.2007.04.123]  GO

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Amorphous Lanthanum Lutetium Oxide Thin Films as an Alternative High-k Material : Physics and technology of high-k gate dielectrics 5
ECS transactions 11, 311 - 318 (2007) [10.1149/1.2779570]  GO

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Advanced CMOS process for floating gate field-effect transistors in bioelectronic applications
Sensors and actuators / B 128, 208 - 217 (2007) [10.1016/j.snb.2007.06.003]  GO


Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface
Applied physics / A 87, 531 - 537 (2007) [10.1007/s00339-007-3986-9]  GO

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Characterization and electrical properties of high-k GdScO3 thin films grown by atomic layer deposition
Applied physics / A 88, 633 - 637 (2007) [10.1007/s00339-007-4069-7]  GO

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Electronegativity and point defect formation in the ion implanted SiO2 layers
Vacuum 81, 1296 - 1300 (2007) [10.1016/j.vacuum.2007.01.032]  GO

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Strong Improvement of the Electroluminescence Stability of SiO2:Gd Layers by Potassium Co-implantation
Electrochemical and solid-state letters 10, J30 - J32 (2007) [10.1149/1.2404293]  GO

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Strained Silicon-On-Insulator-Fabrication and Characterization
ECS transactions 6, 339 - 344 (2007)  GO

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Zeeman splitting in ballistic GaIn/As/InP split-gate quantum point contacts
Applied physics letters 90, 122107 (2007) [10.1063/2715106]  GO

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Editorial: Special Issue: \"From Surface Science to Nanoscale Devices\
Applied physics / A 87, 343 (2007) [10.1007/s00339-007-3999-4]  GO

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Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN
Nature materials 6, 882 - 887 (2007) [10.1038/nmat2012]  GO

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Investigation of AlN growth on sapphire substrates in a horizontal MOVPE reactor
Journal of physics and chemistry of solids 68, 1131 - 1134 (2007) [10.1016/j.jpcs.2007.05.004]  GO

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Nanoscale imaging of surface piezoresponse on GaN epitaxial layers
Applied surface science 253, 4300 - 4306 (2007) [10.1016/j.apsusc.2006.09.039]  GO

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Two-dimensional arrays of self-organized ge islands obtained by chemical vapor deposition on pre-patterned silicon substrates
Nanotechnology 18, 455307 (2007) [10.1088/0957-4484/18/45/455307]  GO

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Assembly of ordered carbon shells on GaN nanowires
Applied physics letters 90, 093118 (2007) [10.1063/1.2710189]  GO

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Liquid Injection MOCVD of Dysprosium Scandate Films: Deposition Characteristics and High-k Applications
Journal of the Electrochemical Society 154, G147 - G154 (2007) [10.1149/1.2731299]  GO

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Thin Films of HfO2 for High-k Gate Oxide Applications from Engineered Alkoxide- and Amide-Based MOCVD Precursors
Journal of the Electrochemical Society 154, G77 - G84 (2007) [10.1149/1.2431324]  GO

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Growth and properties of SiGe structures obtained by selective epitaxy on finite areas
Applied physics / A 87, 485 - 490 (2007) [10.1007/s00339-007-3917-9]  GO

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Terahertz generation with a 1064 nm DFB laser diode
Electronics letters 43, 108 (2007) [10.1049/el:20062222]  GO

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A novel THz source based on a two-color Nd: LSB microchip laser and a LT-GaAsSb photomixer
Applied physics / B 87, 13 (2007) [10.1007/s00340-006-2492-7]  GO

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Dephasing of a quantum dot due to the Coulomb interaction with a gate electrode
Physical review / B 76, 064306 - 064313 (2007) [10.1103/PhysRevB.76.064306]  GO

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Induced Ferroelectricity in Strained Epitaxial SrTiO3 Films on Various Substrates
Journal of applied physics 102, 044119-1 - 044119-5 (2007) [10.1063/1.2773680]  GO

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Ferroelectric properties of compressively strained epitaxial SrTiO3 films on sapphire
Journal of the European Ceramic Society 27, 2899 - 2902 (2007) [10.1016/j.jeurceramsoc.2006.11.063]  GO

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Influence of the reactor inlet configuration on the AlGaN growth efficiency
Journal of crystal growth 298, 413 - 417 (2007) [10.1016/j.jcrysgro.2006.10.047]  GO

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Intra-atomic photoluminescence at 1.41 eV of substitutional Mn in GaMnN of high optical quality
Journal of applied physics 101, 063504 (2007) [10.1063/1.2710342]  GO

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Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs
IEEE Electron Device Letters 28, 223 - 225 (2007) [10.1109/LED.2007.891258]  GO

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Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation
Journal of applied physics 102, 023522-1 - 023522-4 (2007) [10.1063/1.2759877]  GO

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Roughness improvement of the CoSi2/Si interface for an application as buried silicide
Microelectronic engineering 84, 2537 (2007) [10.1016/j.mee.2007.05.056]  GO

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Synthesis and characterization of an n=6 Aurivillius phase incorporating magnetically active manganese
Applied physics letters 91, 033113 (2007) [10.1063/1.2756163]  GO

PhD 2007

Diploma thesis 2007

Proceedings and book articels 2007


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