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Publications 2009

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Effect of biaxial strain on the electrical and magnetic properties of (001) La0.7Sr0.3MnO3 thin films
Applied physics letters 95, 112504 (2009) [10.1063/1.3213346]  GO

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Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N2 carrier gas
Journal of crystal growth 311, 3813 - 3816 (2009) [101016/j.jcrysgro.2009.06.015]  GO

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Electronic transport in mesoscopic superconductor/2D electron gas junctions in strong magnetic field
Bulletin of the Russian Academy of Sciences / Physics 73, 880 - 882 (2009) [10.3103/S1062873809070053]  GO

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Ferroelectric thin film field-effect transistors based on ZnO/BaTi03 heterostructures
Journal of vacuum science & technology / B 27, 1789 - 1793 (2009) [10.1116/1.3086720]  GO

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Growth of homoepitaxial strontium titanate thin films by molecular-beam epitaxy
Applied physics letters 94, 162905 (2009) [10.1063/1.3117365]  GO

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Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/-Si:C/Si(100) substrates
Applied physics letters 95, 144103 (2009) [10.1063/1.3240409]  GO

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High temperature antimony ion implantation in strained silicon-on-insulator
Solid state electronics 53, 828 - 832 (2009) [10.1016/j.sse.2009.04.036]  GO

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Si ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures
Journal of applied physics 105, 114905 (2009) [10.1063/1.3139274]  GO

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The properties of high-k gate dielectric films deposited on HRSOI
Microelectronic engineering 86, 2404 - 2407 (2009) [10.1016/j.mee.2009.05.001]  GO

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Characterization of gadolinium oxide film by pulse laser deposition
Applied surface science 256, 921 - 923 (2009) [10.1016/j.apsusc.2009.08.086]  GO

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Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE
Journal of crystal growth 312(1), 1 - 9 (2009) [10.1016/j.jcrysgro.2009.09.044]  GO

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Femtosecond electro-optic effect in (Cd,Mn) Te single crystals
Journal of physics / Conference Series 193, 012057 (2009) [10.1088/1742-6596/193/1/012057]  GO

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Evolution and stability of ordered SiGe islands grown on patterned Si(100) substrates
Journal of applied physics 105, 122405 (2009) [10.1063/1.3117230]  GO

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Formation of GaN nanodots on Si (111) by droplet nitridation
Journal of crystal growth 311, 3389 - 3394 (2009) [10.1016/j.jcrysgro.2009.04.025]  GO

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Addition of yttrium into HfO2 films: Microstructure and electrical properties
Journal of vacuum science & technology / A 27, 503 - 514 (2009) [10.1116/1.3106627]  GO

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A hybrid time-domain model for pulsed terahertz dipole antennas
Journal of the European Optical Society / Rapid publications 4, 09001-7 (2009) [10.2971/jeos.2009.09001]  GO

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2D Analysis of the Effects of Geometry on the Response of High-T-c Superconductive Bolometric Detectors
IEEE transactions on applied superconductivity 19, 484 - 488 (2009) [10.1109/TASC.2009.2018771]  GO

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Optimization of NDE Characterization Parameters for a RF-SQUID Based System Using FEM Analysis
IEEE transactions on applied superconductivity 19, 791 - 795 (2009) [10.1109/TASC.2009.2018739]  GO

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Silicon Nanowire FETs with Uniaxial Tensile Strain
Solid state electronics 53, 1257 - 1262 (2009) [10.1016/j.sse.2009.10.013]  GO

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Measurement of effective electron mass in biaxial tensile strained silicon on insulator
Applied physics letters 95, 182101 (2009) [10.1063/1.3254330]  GO

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Phase-coherence and symmetry in four-terminal magnetotransport measurements on InN nanowires
Applied physics letters 94, 252107 (2009) [10.1063/1.3159626]  GO

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Characterization of AlGaN/GaN MISHFETs on a Si substrate by static and high-freguency measurements
Semiconductor science and technology 24, 075014 (2009) [10.1088/0268-1242/24/7/075014]  GO

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Finite element simulation of metal-semiconductor-metal photodetector
Solid state electronics 53, 1144 - 1148 (2009) [10.1016/j.sse.2009.07.001]  GO

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High temperature implantation: a solution for N-type junctions in strained silicon
ECS transactions 19, 95 - 103 (2009)  GO

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Stress generated modifications of epitaxial ferroelectric SrTiO3 films on sapphire
Journal of applied physics 105, 114104 (2009) [10.1063/1.3139292]  GO

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X-ray diffraction investigation of a three-dimensional Si/SiGe quantum dot crystal
Physical review / B 79, 035324 (2009) [10.1103/PhysRevB.79035324]  GO

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Preparation of High Permittivity GdScO3 Films by Liquid Injection MOCVD
ECS transactions 25, 1061 (2009)  GO

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Raman scattering of phonon-plasmon coupled modes in self-assemled GaN nanowires
Journal of applied physics 105, 123707 (2009) [10.1063/1.3148862]  GO

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Oxygen octahedron reconstruction in the SrTiO3/LaAlO3 heterointerfaces investigated using aberration-corrected ultrahigh-resolution transmission electron microscopy
Physical review / B 79, 081405 (2009) [10.1103/PhysRevB.79.081405]  GO

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Terahertz birefringence for orientation analysis
Applied optics 48, 2037 - 2044 (2009)  GO

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High tunability of the soft mode in strained SrTiO3/DyScO3 multilayers
Journal of physics / Condensed matter 21, 115902-1 - 115908-8 (2009) [10.1088/0953-8984/21/11/115902]  GO

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Temperature and electric field tuning of the ferroelectric soft mode in a strained SrTiO3/DyScO3 heterostructure
Physical review / B 80, 174116 (2009) [10.1103/PhysRevB.80.174116]  GO

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Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures
Applied physics letters 95, 031907 (2009) [10.1063/1.3184569]  GO

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Monitoring polymeric compounding processes inline with THz time-domain spectroscopy
Polymer testing 28, 30 - 35 (2009) [10.1016/j.polymertesting.2008.09.009]  GO

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g-factor and exchange energy in a few-electron lateral InGaAs quantum dot
Applied physics letters 95, 192112 (2009) [10.1063/1.3264053]  GO

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Optical band gap and magnetic properties of unstrained EuTiO3 films
Applied physics letters 94, 212509 (2009) [10.1063/1.3133351]  GO

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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs
Microelectronic engineering 86, (2009) [10.1016/j.mee.2009.03.065]  GO

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Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-k films on Si(100) and its effects on the electrical characteristics
Applied physics / A 96, 447 - 451 (2009) [10.1007/s00339-009-5153-y]  GO

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Intermixing and charge neutrality at DyScO3/SrTiO3 interfaces
Acta materialia 57, 3192 - 3198 (2009) [10.1016/j.actamat.2009.03.031]  GO

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Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction
Physica status solidi / A 206, 1775 - 1779 (2009) [10.1002/pssa.200881595]  GO

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NiSi2/Si interface chemistry and epitaxial growth mode
Acta materialia 57(1), 232 - 236 (2009) [10.1016/j.actamat.2008.09.002]  GO

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Output Power Improvement in MSM Photomixers by Modified Finger Contacts Configuration
IEEE photonics technology letters 21, 146 - 148 (2009) [10.1109/LPT.2008.2008202]  GO

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Flash Lamp Activation of n- and p-type dopants in strained and unstrained SOI and HOI
ECS transactions 19, 79 - 86 (2009)  GO

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Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers
Applied physics letters 95, 034102 (2009) [10.1063/1.3180279]  GO

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Soft mode behavior in SrTiO3/DyScO3 thin films: Evidence of ferroelectric and antiferroistortive phase transition
Applied physics letters 95, 232902 (2009) [10.1063/1.3271179]  GO

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Spin-orbit coupling and phase-coherent transport in InN nanowires
Physical review / B 80, 125321 (2009) [10.1103/PhysRevB.80.125321]  GO

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Terahertz optical mixer design
Photonics letters of Poland 1, 28 - 30 (2009)  GO

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Continuous Voltage Tunability of Intersubband Relaxation Times in Coupled SiGe Quantum Well Structures Using Ultrafast Spectroscopy
Physical review letters 102, 147401 (2009) [10.1103/PhysRevLett.102147401]  GO

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Electrical transport properties of single undoped and n-type doped InN nanowires
Nanotechnology 20, 405206 (2009) [10.1088/0957-4484/20/40/405206]  GO

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Growth of Ge dots on templated Si substrates with diffusion-altered holes
epl 85, 58002 (2009) [10.1209/0295-5075/85/58002]  GO

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Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon
Applied physics / A 94, 521 - 524 (2009) [10.1007/s00339-008-4962-8]  GO

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Origin and limiting mechanism of induced nonequilibrium currents in gated two-dimensional electron systems
Physical review / B 80(11), 115336 (2009) [10.1103/PhysRevB.80.115336]  GO

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Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors
Solid state electronics 53, 1126 - 1129 (2009) [10.1016/j.sse.2009.05.009]  GO

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Spin-orbit coupling in GaxIn1-xAs/InP two-dimensional electron gases and quantum wire structures
Semiconductor science and technology 24, 064001 (2009) [10.1088/0268-1242/24/6/064001]  GO

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Integration of \"GexSe1-x\" in crossbar arrays for non-volatile memory applications
Microelectronic engineering 86, 1054 - 1056 (2009) [10.1016/j.mee.2009.01.010]  GO

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Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
Applied physics letters 94, 042114 (2009) [10.1063/1.3077188]  GO

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Artificial intelligence/fuzzy logic method for analysis of combined signals from heavy metal chemical sensors
Electrochimica acta 54, 6082 - 6088 (2009) [10.1016/j.electacta.2009.03.035]  GO

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Low frequency noise in 2DEG channel of AlGaN/GaN heterostructures scaled to nanosize width
AIP conference proceedings 1129, 487-490 (2009) [10.1063/1.3140507]  GO

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Gate-controlled Quantum collimation in nanocolumn resonant tunnelling transistors
Nanotechnology 20, 465402 (2009) [10.1088/0957-4484/20/46/465402]  GO

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Pattern induced phase transistion of vortex motion in high-Tc films
Applied physics letters 94, 202501 - 202503 (2009) [10.1063/1.3139077]  GO

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Epitaxial growth of NiSi2 induced by sulfur segregation at the NiSi2/Si(100) interface
Journal of materials research 24, 135139 (2009) [10.1557/JMR.2009.0006]  GO

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Low vacuum photo electron emitting thin films
Physica status solidi / A 206, 484 - 488 (2009) [10.1002/pssa.200880477]  GO

PhD 2009


Phasenkohärenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodrähten
150 (2009)


Physical Investigations of novel Materials and Structures for Nano-MOSFETs
125 p. (2009)

Diploma thesis 2009

Diploma Thesis

Physical studies of ultra thin Nickel-Silicide/Silicon contacts
91 p. (2009)

Proceedings and book articels 2009


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