Search

link to homepage

Peter Grünberg Institute
(leer)

Navigation and service


Publications 2011

; ; ; ; ; ; ; ; ;
Zn nanoparticles irradiated with swift heavy ions at low fluences: Optically-detected shape elongation induced by nonoverlapping ion tracks
Physical review / B 83, 205401 (2011) [10.1103/PhysRevB.83.205401]  GO

;
Spin precession and modulation in ballistic cylindrical nanowires due to the Rashba effect
Physical review / B 83, 115305 (2011) [10.1103/PhysRevB.83.115305]  GO

; ; ;
Surface-induced effects in GaN nanowires
Journal of materials research 26, 2157 - 2168 (2011) [10.1557/jmr.2011.211]  GO

; ; ; ; ;
Mapping and statistics of ferroelectric domain boundary angles and types
Applied physics letters 99, 162902 (2011) [10.1063/1.3643155]  GO

; ; ; ; ; ; ; ; ;
Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
Journal of vacuum science & technology / B 29, 01A903 (2011) [10.1116/1.3533760]  GO

; ; ; ; ; ; ; ; ;
Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process
IEEE Transactions on Electron Devices 58, 617 - 622 (2011) [10.1109/TED.2010.2096509]  GO

; ; ; ; ; ; ; ; ;
Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process
IEEE Electron Device Letters 32, 15 - 17 (2011) [10.1109/LED.2010.2089423]  GO

; ; ; ; ; ; ; ; ; ;
LaScO3 as higher-k dielectric for p-MOSFETs
Microelectronic engineering 88, 1323 - 1325 (2011) [10.1016/j.mee.2011.03.048]  GO

; ; ;
Oxygen Permeation and Stability Investigations on MIEC Membrane Materials Under Operating Conditions for Power Plant Processes
Journal of membrane science 370, (2011) [10.1016/j.memsci.2010.12.021]  GO

; ; ; ; ; ; ; ; ; ;
Manipulating InAs nanowires with submicrometer precision
Review of scientific instruments 82, 113705 (2011) [10.1063/1.3657135]  GO

; ; ;
Etching titanium nitride gate stacked on high-k dielectric
Microelectronic engineering 88, 2541 - 2543 (2011) [10.1016/j.mee.2011.02.049]  GO

; ; ; ; ; ; ;
High quality TbMnO3 films deposited on YAlO3
Journal of alloys and compounds 509, 5061 - 5063 (2011) [10.1016/j.jallcom.2011.03.015]  GO

; ; ; ; ; ; ; ; ;
Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
Advanced materials research 276, 87 - 93 (2011) [10.4028/www.scientific.net/AMR.276.87]  GO

; ; ; ; ; ; ;
Properties of uniform diameter InN nanowires obtained under Si doping
Nanotechnology 22, 125704 (2011) [10.1088/0957-4484/22/12/125704]  GO

; ; ; ;
Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays
Applied physics letters 98, 103102 (2011) [10.1063/1.3559618]  GO

; ; ; ; ; ; ; ; ; ; ; ; ;
X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor
Nano letters 11, 2875 - 2880 (2011) [10.1021/nl2013289]  GO

; ; ; ; ; ; ; ; ; ;
Enhanced Raman Scattering of Ultramarine on Au-coated Ge/Si-nanostructures
Plasmonics 6, 413 - 418 (2011) [10.1007/s11468-011-9219-2]  GO

; ; ; ; ; ;
MBE growth optimization of topological insulator Bi2Te3 films
Journal of crystal growth 324, 115 - 118 (2011) [10.1016/j.jcrysgro.2011.03.008]  GO

; ; ; ; ; ; ;
Millisecond flash-lamp annealing of LaLuO3
Microelectronic engineering 88, 1346 - 1348 (2011) [10.1016/j.mee.2011.03.126]  GO

; ; ; ; ; ; ; ; ; ; ;
Structural and optical properties of InGaN - GaN nanowire heterostructures grown by Molecular Beam Epitaxy
Journal of applied physics 22, 014309 (2011) [10.1088/0957-4484/22/7/075601]  GO

; ; ; ; ; ; ; ; ; ; ; ; ;
Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices
ECS transactions 35, 461 - 479 (2011)  GO

; ; ; ; ; ; ; ; ; ; ; ; ; ;
Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology
Journal of vacuum science & technology / B 29, 01A301 (2011) [10.1116/1.3521374]  GO

; ; ; ; ; ; ; ; ; ; ;
Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films
Applied physics letters 98, 102110 (2011) [10.1063/1.3563708]  GO

; ; ; ; ; ; ; ; ;
Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System
IEEE photonics technology letters 23, 1189 - 1191 (2011) [10.1109/LPT.2011.2157816]  GO

; ; ; ; ; ; ; ; ;
High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack
Microelectronic engineering 88, 2955 - 2958 (2011) [10.1016/j.mee.2011.04.030]  GO

; ; ; ; ; ; ; ; ;
Study of interfaces and band offsets in TiN/amorphous LaLu=3 gate stacks
Microelectronic engineering 88, 1495 - 1498 (2011) [10.1016/j.mee.2011.03.051]  GO

; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Integration of MOSFETs with SiGe dots as stressor material
Solid state electronics 60, 75 - 83 (2011) [10.1016/j.sse.2011.01.038]  GO

; ; ; ; ;
Fabrication and electrical characterization of high-k LaGdO3 thin films and field effect transistors
ECS transactions 35, 297 - 304 (2011)  GO

; ; ; ; ; ; ;
Structural and Electrical Properties of Lanthanum Gadolinium Oxide: Ceramic and Thin Films for High-k Application
Integrated ferroelectrics 125, 44 - 52 (2011) [10.1080/10584587.2011.574039]  GO

; ; ; ; ; ;
Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy
Applied physics letters 98, 222503 (2011) [10.1063/1.3595309]  GO

; ; ; ; ; ; ; ; ;
Different architectures of relaxed Si1-xGe/Si preudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics
Journal of crystal growth 328, 18-24 (2011) [10.1016/j.jcrysgro.2011.06.035]  GO

; ; ;
Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state
Applied physics letters 98, 211106 (2011) [10.1063/1.3593134]  GO

; ; ; ; ; ; ; ;
Analytical Model for the Extraction of Flaw-Induced Current Interactions for SQUID NDE
IEEE transactions on applied superconductivity 21, 3442 - 3446 (2011) [10.1109/TASC.2011.2119373]  GO

; ; ; ; ;
An Efficient SQUID NDE Defect Detection Approach by Using an Adaptive Finite-Element Modeling
Journal of superconductivity and novel magnetism 24, (2011) [10.1007/s10948-010-0860-3]  GO

; ; ; ;
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layers
Nanotechnology 22, 095603 (2011) [10.1088/0957-4484/22/9/095603]  GO

; ; ; ;
CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique
Journal of vacuum science & technology / B 29, 01AB03 (2011) [10.1116/1.3533267]  GO

; ; ; ;
Investigation of Electron and Hole Charge Trapping in LaLuO3 Stack MOS Capacitor Using the Three-Pulse CV Technique
ECS transactions 35, 531 - 543 (2011)  GO

; ; ; ;
Investigation of a hydrogen implantation-induced blistering phenomenon in Si0.70Ge0.30
Semiconductor science and technology 26, 125001 (2011) [10.1088/0268-1242/26/12/125001]  GO

; ; ; ; ;
Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing
IEEE Transactions on Electron Devices 58, 1822 - 1829 (2011) [10.1109/TED.2011.2135355]  GO

; ; ; ; ; ;
Flux growth of ZnO crystals doped by transition metals
Journal of crystal growth 314, (2011) [10.1016/j.jcrysgro.2010.11.148]  GO

; ; ; ; ; ; ; ; ; ; ;
Magnetism in GaN layers implanted by La, Gd, Dy and Lu
Thin solid films 519, 6120 - 6125 (2011) [10.1016/j.tsf.2011.04.110]  GO

; ; ; ; ; ;
Giant mesoscopic photoconductance fluctuations in Ge/Si quantum dot system
Applied physics letters 98, 142101 (2011) [10.1063/1.3574022]  GO

;
Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy
IEEE journal of selected topics in quantum electronics 17, 859 - 868 (2011) [10.1109/JSTQE.2010.2092416]  GO

; ; ; ; ;
Field effect transistor based on single crystalline InSb nanowire
Journal of materials chemistry 21, 2459 - 2462 (2011) [10.1039/c0jm03855e]  GO

; ; ; ; ; ; ; ; ; ; ; ;
Effect of Si-doping on InAs nanowire transport and morphology
Journal of applied physics 110, 053709 (2011) [10.1063/1.3631026]  GO

; ; ; ; ; ;
Characterization of high- LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition
Applied physics letters 99, 182103 (2011) [10.1063/1.3657521]  GO

; ; ; ; ; ;
Optical and electrical properties of gold nanowires synthesized by electrochemical deposition
Journal of applied physics 110, 094301 (2011) [10.1063/1.3656733]  GO

; ; ; ; ; ; ;
Investigation of the surface properties of gold nanowire arrays
Applied surface science 258, 147 -1 50 (2011) [10.1016/j.apsusc.2011.08.021]  GO

; ; ; ; ; ; ; ; ; ; ; ;
High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate
Solid state electronics 62(1), 185 - 188 (2011) [10.1016/j.sse.2011.03.002]  GO

; ; ; ; ; ; ; ;
Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacs by C+ Pre-Implantation
Electrochemical and solid-state letters 14, H261-H263 (2011) [10.1149/1.3578387]  GO

; ; ; ; ; ; ; ; ; ;
Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy
Applied physics letters 98, 252101 (2011) [10.1063/1.3601464]  GO

; ;
An Improved Si tunnel Field Effect Transistor with a Buried Strained Si1-xGex Source
IEEE Electron Device Letters 32, 1480 - 1482 (2011) [10.1109/LED.2011.2163696]  GO

; ; ; ;
Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate
JETP letters 93(1), 10-14 (2011) [10.1134/S0021364011010103]  GO

; ; ; ;
New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires
Physica / E 44, 690 - 695 (2011) [10.1016/j.physe.2011.11.010]  GO

; ; ; ;
Nanoscale photoelectron ionisation detector based of lanthanum hexaboride
Physica status solidi / A 208, 1241 - 1245 (2011) [10.1002/pssa.201000966]  GO

PhD 2011

Diploma thesis 2011

Proceedings and book articels 2011


Servicemeu

Homepage