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Publications 2012

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Hall effect measurements on InAs nanowires
Applied physics letters 101(15), 152106 (2012) [10.1063/1.4759124]  GO

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Mode of Growth of Ultrathin Topological Insulator Bi2Te3 Films on Si (111) Substrates
Crystal growth & design 12(12), 6098–6103 (2012) [10.1021/cg301236s]  GO

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The adsorption-controlled growth of LuFe2O4 by molecular-beam epitaxy
Applied physics letters 101(13), 132907 (2012) [10.1063/1.4755765]  GO

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Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography
Thin solid films 520, 5080 - 5085 (2012) [10.1016/j.tsf.2012.03.036]  GO

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Admittance Spectroscopy of Si/LaLuO3 and Si/GdSiO MOS Structures
ECS transactions 45, 103 - 117 (2012) [10.1149/1.3700877]  GO

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Scanning tunneling microscopy with InAs nanowire tips
Applied physics letters 101(24), 243101 - (2012) [10.1063/1.4769450]  GO

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Monitoring structural influences on quantum transport in InAs nanowires
Applied physics letters 101, 062104 (2012) [10.1063/1.4742326]  GO

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Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot
Physica status solidi / C 9(2), 169 - 174 (2012) [10.1002/pssc.201100340]  GO

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Strained Nanoscaled Devices
ECS transactions 50(9), 717-736 (2012) [10.1149/05009.0727ecst]  GO

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Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures
Scientific reports 2, 746 (2012) [10.1038/srep00746]  GO

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Supercurrent in Nb/InAs-nanowire/Nb Josephson junctions
Journal of applied physics 112, 034316 (2012) [10.1063/1.4745024]  GO

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Self-assembled GaN nanostructures by dry etching and their optical properties
Physica status solidi / A 209(3), 443 - 446 (2012) [10.1002/pssa.201100478]  GO

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Electrical characterization of O-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100> and <110> channel orientations
Thin solid films 520, 3332 - 3336 (2012) [10.1016/j.tsf.2011.08.034]  GO

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Electrical Spin Injection into InN Semiconductor Nanowires
Nano letters 12(9), 4437 - 4443 (2012) [10.1021/nl301052g]  GO

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Selected polymers on CW and pulsed THz investigations
Opto-electronics review 20(4), 335 - 339 (2012) [10.2478/s11772-012-0034-x]  GO

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Polarization sensitive terahertz imaging: detection of birefringence and optical axis
Optics express: the international electronic journal of optics 20(21), 23025-23035 (2012) [10.1364/OE.20.023025]  GO

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Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices
Semiconductor science and technology 27, 055012 (2012) [10.1088/0268-1242/27/5/055012]  GO

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Quanternary Enhancement-Mode HFET With In Situ SiN Passivation
IEEE Electron Device Letters 33, 519 - 521 (2012) [10.1109/LED.2012.2184735]  GO

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20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain
Solid state electronics 71, 88 - 92 (2012) [10.1016/j.sse.2011.10.026]  GO

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GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD
Semiconductor science and technology 27(11), 115002 - (2012) [10.1088/0268-1242/27/11/115002]  GO

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Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
Applied physics letters 100, 142113 (2012) [10.1063/1.3701584]  GO

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Boron-doped hydrogenated microcrystalline silicon oxide (μc-SiOx:H) for application in thin-film silicon solar cells
Journal of non-crystalline solids 358(17), 1962 - 1965 (2012) [10.1016/j.jnoncrysol.2011.12.047]  GO

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Lutetium-doped EuO films grown by molecular-beam epitaxy
Applied physics letters 100, 222101 (2012) [10.1063/1.4723570]  GO

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Losses from long-living photoelectrons in terahertz-generating continuous-wave photomixers
Applied physics letters 100, 191112 (2012) [10.1063/1.4711777]  GO

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Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate
Vacuum 86(6), 754 - 756 (2012) [10.1016/j.vacuum.2011.07.016]  GO

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Non-uniform distribution of induced strain in a gate recessed AlGaN/GaN structure evaluated by micro-PL measurements
Semiconductor science and technology 27, 105008 (2012) [10.1088/0268-1242/27/10/105008]  GO

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Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Physica status solidi / C 9, 911-914 (2012) [10.1002/pssc.201100408 ]  GO

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Subpicosecond electronhole recombination time and terahertz-bandwidth photoresponse in freestanding GaAs epitaxial mesoscopic structures
Applied physics letters 101, 031111 (2012) [10.1063/1.4737442]  GO

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p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures
Journal of the Electrochemical Society 159, H44 - H51 (2012) [10.1149/2.060201jes]  GO

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Hole Transport in Strained Si0.5Ge0.5 QW-MOSFETs with <110> and <100> Channel Orientations
IEEE electron device letters 33, 1105 - 1107 (2012) [10.1109/LED.2012.2199958]  GO

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On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks
Journal of applied physics 112(4), 044102 - (2012) [10.1063/1.4746790]  GO

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Optimized marker definition for high overlay accuracy e-beam lithography
Microelectronic engineering 97, 68 - 71 (2012) [10.1016/j.mee.2012.04.029]  GO

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Detectivity Analysis and Optimization of Large-Area Freestanding-Type HTS Bolometers
IEEE transactions on applied superconductivity 22, 2100107 (2012) [10.1109/TASC.2011.2179543]  GO

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ZnO thin films prepared by spray-pyrolysis technique from organo-metallic precursor
Ceramics silikáty 56, 117 - 121 (2012)  GO

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LaLuO3 higher-k dielectric integration in SOI MOSFETs with a gate-first process
Solid state electronics 71, 19 - 24 (2012) [10.1016/j.sse.2011.10.014]  GO

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Electrical properties of individual GaP nanowires doped by zinc
Physica status solidi / A 209(12), 2505–2509 (2012) [10.1002/pssa.201228255]  GO

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Simulation of Fabricated 20-nm Schottky Barrier MOSFETs on SOI:Impact of barrier Lowering
IEEE Transactions on Electron Devices 59, 1320 - 1327 (2012) [10.1109/TED.2012.2187657]  GO

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Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy
Journal of applied physics 112(9), 093524 - (2012) [10.1063/1.4764342]  GO

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Growth Studies on Quaternary AlInGaN Layers for HEMT Applicationf
Journal of electronic materials 41(5), 905 - 909 (2012) [10.1007/s11664-012-1989-6]  GO

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Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer
Journal of crystal growth 353(1), 39 - 46 (2012) [10.1016/j.jcrysgro.2012.05.006]  GO

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Molecular Beam Epitaxy Growth of GaAs/InAs Core-Shell Nanowires and Fabrication of InAs Nanotubes
Nano letters 12(11), 5559–5564 (2012) [10.1021/nl302502b]  GO

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Impact of strain and Ge concentration on the performance pf planar SiGe band-to-band-tunneling transistors
Solid state electronics 71, 42 - 47 (2012) [10.1016/j.sse.2011.10.018]  GO

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Unipolar behavior of asymmetrically doped strained Si 0.5Ge 0.5 tunneling field-effect transistors
Applied physics letters 101(12), 123501 (2012) [10.1063/1.4751356]  GO

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Mn doping of GaN layers grown by MOVPE
Ceramics silikáty 56, 122 - 126 (2012)  GO

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Comparison of InAs nanowire conductivity: influence of growth method and structure
38th International Symposium on Compound Semiconductors (ISCS), ISCS, Berlin, Germany, 05/22/2011 - 05/26/2011 Physica status solidi / C 9(2), 230 - 234 (2012) [10.1002/pssc.201100282]  GO

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Development of a thin-film sensor array for analytical monitoring of heavy metals in aqueous solutions
Physica status solidi / A 209, 885 - 891 (2012) [10.1002/pssa.201100733]  GO

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Silicon germanium tin alloys formed by pulsed laser induced epitaxy
Applied physics letters 100(20), 204102 - (2012) [10.1063/1.4714768]  GO

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Laser synthesis of germanium tin alloys on virtual germanium
Applied physics letters 100, 104101 (2012) [10.1063/1.3692175]  GO

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Characterization of non-stoichiometric co-sputtered Ba0.6Sr0.4(Ti1 − x Fe x )1 + x O3 − δ thin films for tunable passive microwave applications
Analytical and bioanalytical chemistry 403(3), 643 - 650 (2012) [10.1007/s00216-011-5435-z]  GO

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Photoluminescence and Raman scattering studies of GaN nanowires obtained by top-down and bottom-up approaches
2011 MRS Fall Meeting, Boston, USA, 11/28/2011 - 12/02/2011 MRS online proceedings library 1408, 29-34 (2012) [10.1557/opl.2012.196]  GO

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Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures
Journal of applied physics 111, 014904 (2012) [10.1063/1.3672447]  GO

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Morphology evolution and optical properties of GaN nano-pyramids grown by selective area MOVPE
Physica status solidi / C 9, 624 - 627 (2012) [10.1002/pssc.201100411]  GO

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Preparation of Ohmic contacts to GaAs/AlGaAs-core/shell-nanowires
Applied physics letters 100, 042103 (2012) [10.1063/1.3678639]  GO

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Regimes of flux transport at microwave frequencies in nanostructured high-Tc films
Physical review / B 85, 04503 (2012) [10.1103/PhysRevB.85.064503]  GO

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Flux transport in nanostructured high-Tc films at microwave frequencies
Physica / C 479, 69 - 73 (2012) [10.1016/j.physc.2011.12.018]  GO

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AlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric
IEEE Electron Device Letters 33, 979 - 981 (2012) [10.1109/LED.2012.2195291]  GO

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Phase coherent transport in InSb nanowires
Applied physics letters 101, 082103 (2012) [10.1063/1.4747200]  GO

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Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI
IEEE electron device letters 33, 758 - 760 (2012) [10.1109/LED.2012.2190035]  GO

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Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
Solid state electronics 74, 97-101 (2012) [10.1016/j.sse.2012.04.018]  GO

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Negative differential conductance in InAs wire based double quantum dot induced by a charged AFM tip
Journal of experimental and theoretical physics 115(6), 1062 - 1067 (2012) [10.1134/S1063776112110131]  GO

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Direct observation of standing electron waves in diffusively conducting inas nanowire
JETP letters 96(2), 109-112 (2012) [10.1134/S0021364012140159]  GO

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Nano photoelectron ioniser chip using LaB6 for ambient pressure trace gas detection
Microelectronic engineering 98, 472 - 476 (2012) [10.1016/j.mee.2012.07.094]  GO

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Determination of the thermal conductivity tensor of the n=7 Aurivillius phase Sr4Bi4Ti7024
Applied physics letters 101, 021904 (2012) [10.1063/1.4733616]  GO

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Synthesis of the superlattice complex oxide Sr5Bi4Ti8027 and its band gap behavior
Applied physics letters 100, 223109 (2012) [10.1063/1.4722942]  GO

Proceedings and book articels 2012


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