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Publications 2013

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Behavior of locally injected charges in high-k nanolayers of LaScO3 insulator on a Si substrate
Technical physics letters 39(5), 427 - 430 (2013) [10.1134/S1063785013050039]  GO

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Axial strain in GaAs/InAs core-shell nanowires
Applied physics letters 102(4), 043109 - (2013) [10.1063/1.4790185]  GO

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Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires
Nanotechnology 24(3), 035203 (2013) [10.1088/0957-4484/24/3/035203]  GO

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Gate-induced transition between metal-type and thermally activated transport in self-catalyzed MBE-grown InAs nanowires
Nanotechnology 24(32), 325201 - (2013) [10.1088/0957-4484/24/32/325201]  GO

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Long electron spin coherence in ion-implanted GaN: The role of localization
Applied physics letters 102(19), 192102 - (2013) [10.1063/1.4804558]  GO

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Etched graphene quantum dots on hexagonal boron nitride
Applied physics letters 103(7), 073113 (2013) [10.1063/1.4818627]  GO

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Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
Applied physics letters 103(26), 263103 (2013) [10.1063/1.4855436]  GO

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Self-catalyzed VLS grown InAs nanowires with twinning superlattices
Nanotechnology 24(33), 335601 - (2013) [10.1088/0957-4484/24/33/335601]  GO

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The absence of Fraunhofer patterns in narrow Nb/InAs-nanowire/Nb junctions
The Physics of Semiconductors
THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012, Zurich, Switzerland, 07/29/2012 - 08/03/2012
AIP conference proceedings 1566, (2013) [10.1063/1.4848309]  GO

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Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires
Nanotechnology 24(8), 085603 (2013) [10.1088/0957-4484/24/8/085603]  GO

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p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
IEEE transactions on electron devices 60(10), 3005 - 3011 (2013) [10.1109/TED.2013.2272330]  GO

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Spin-polarization limit in $Bi_{2}Te_{3}$ Dirac cone studied by angle- and spin-resolved photoemission experiments and ab initio calculations
Physical review / B 87(3), 035127 (2013) [10.1103/PhysRevB.87.035127]  GO

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Development of redox glasses and subsequent processing by means of pulsed laser deposition for realizing silicon-based thin-film sensors.
Electrochimica acta 113, 762 - 767 (2013) [10.1016/j.electacta.2013.08.092]  GO

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Strain States in YSZ / RE2O3 (RE = Er, Y) Multilayers as a Function of Layer Thickness and Their Effect on Interface Conductivity and Diffusion
MRS online proceedings library 1542, mrss13-1542-g08-02 (2013) [10.1557/opl.2013.577]  GO

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Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics
Microelectronic engineering 109, 381 - 384 (2013) [10.1016/j.mee.2013.04.021]  GO

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Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion–crystallization process
Journal of nanoparticle research 15(10), 1981 (2013) [10.1007/s11051-013-1981-y]  GO

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Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
Applied physics letters 103(23), 231909 - (2013) [10.1063/1.4838695]  GO

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Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing
Journal of applied physics 113(20), 204902 (2013) [10.1063/1.4807001]  GO

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A study of the structural properties of GaN implanted by various rare-earth ions
Nuclear instruments & methods in physics research / B 307, 446 - 451 (2013) [10.1016/j.nimb.2012.11.079]  GO

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Layer-by-layer shuttered molecular-beam epitaxial growth of superconducting Sr1–xLaxCuO2 thin films
Journal of applied physics 113(5), 053911 (2013) [10.1063/1.4790150]  GO

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Effect of film thickness and biaxial strain on the curie temperature of EuO
Applied physics letters 102(6), 062404 - (2013) [10.1063/1.4789972]  GO

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Epitaxial growth of europium monoxide on diamond
Applied physics letters 103(22), 222402 - (2013) [10.1063/1.4833550]  GO

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Effective attenuation length for lanthanum lutetium oxide between 7 and 13 keV
Applied physics letters 102(3), 031607 (2013) [10.1063/1.4789524]  GO

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Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high K/metal gate stacks on Si
Microelectronic engineering 109, 109 - 112 (2013) [10.1016/j.mee.2013.03.066]  GO

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Photoemission spectroscopy study of the lanthanum lutetium oxide∕silicon interface
The journal of chemical physics 138(15), 154709 (2013) [10.1063/1.4801324]  GO

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Structural and optical properties of individual GaP/ZnO core–shell nanowires
Vacuum 98, 106 - 110 (2013) [10.1016/j.vacuum.2012.12.005]  GO

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Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
Journal of crystal growth 384, 71 - 76 (2013) [10.1016/j.jcrysgro.2013.09.018]  GO

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Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
Applied physics letters 102(19), 192904 - (2013) [10.1063/1.4805037]  GO

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Electronic structure, surface morphology, and topologically protected surface states of Sb2Te3 thin films grown on Si(111)
Journal of applied physics 113(5), 053706 (2013) [10.1063/1.4789353]  GO

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Highly birefringent, low-loss liquid crystals for terahertz applications
APL materials 1, 012107 (2013) [10.1063/1.4808244]  GO

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Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers
Journal of electronic materials 42(5), 826 - 832 (2013) [10.1007/s11664-013-2473-7]  GO

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Si substrate preparation for the VS and VLS growth of InAs nanowires
Physica status solidi / Rapid research letters 7(10), 840 - 844 (2013) [10.1002/pssr.201307229]  GO

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Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowires
Journal of crystal growth 378, 506 - 510 (2013) [10.1016/j.jcrysgro.2012.12.035]  GO

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Highly Transparent Conducting Polymer Top Contacts for Future III–Nitride Based Single Photon Emitters
Japanese journal of applied physics 52, 08JH10 - (2013) [10.7567/JJAP.52.08JH10]  GO

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Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy
Applied physics letters 103(16), 162904 - (2013) [10.1063/1.4825367]  GO

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Frequency anomaly in the Rashba-effect induced magnetization oscillations of a high-mobility two-dimensional electron system
Physical review / B 87(3), 035307 (2013) [10.1103/PhysRevB.87.035307]  GO

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Inducing exchange bias in La_{0.67}Sr_{0.33}MnO_{3−δ}/SrTiO_{3} thin films by strain and oxygen deficiency
Physical review / B 88(14), 144427 (2013) [10.1103/PhysRevB.88.144427]  GO

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From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE
16th International Conference on Metalorganic Vapor Phase Epitaxy, Journal of crystal growth 370, 141 - 145 (2013) [10.1016/j.jcrysgro.2012.09.059]  GO

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Rapid thermal synthesis of GaN nanocrystals and nanodisks
Journal of nanoparticle research 15(1), 1411 (2013) [10.1007/s11051-012-1411-6]  GO

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LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces
Nature Communications 4, 9 (2013) [10.1038/ncomms3351]  GO

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Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range
Nanotechnology 24(40), 405302 - (2013) [10.1088/0957-4484/24/40/405302]  GO

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Spectral Sensitivity Tuning of Vertical InN Nanopyramid-Based Photodetectors
Japanese journal of applied physics 52(8S), 08JF05 (2013) [10.7567/JJAP.52.08JF05]  GO

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Site-controlled growth of indium nitride based nanostructures using metalorganic vapour phase epitaxy
Journal of crystal growth 370, 336 - 341 (2013) [10.1016/j.jcrysgro.2012.08.034]  GO

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Reduced Pressure CVD Growth of Ge and Ge1-xSnx Alloys
ECS journal of solid state science and technology 2(5), N99 - N102 (2013) [10.1149/2.006305jss]  GO

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Tensely strained GeSn alloys as optical gain media
Applied physics letters 103(19), 192110 - (2013) [10.1063/1.4829360]  GO

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Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
Applied physics letters 102(19), 192103 - (2013) [10.1063/1.4805034]  GO

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Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6
Solid state electronics 83, 2 - 9 (2013) [10.1016/j.sse.2013.01.032]  GO

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Epitaxial Growth of Ge1-xSnx by REduced Pressure CVD Using SnC14 and Ge2H6
ECS transactions 50(9), 885-893 (2013) [10.1149/05009.0885ecst]  GO

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AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates
Semiconductor science and technology 28(8), 085006 - (2013) [10.1088/0268-1242/28/8/085006]  GO

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Relaxor ferro- and paraelectricity in anisotropically strained SrTiO3 films
Journal of applied physics 113(16), 164103 - (2013) [10.1063/1.4802676]  GO

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Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation
Japanese journal of applied physics 52, 08JN02 - (2013) [10.7567/JJAP.52.08JN02]  GO

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Fabrication and Characterization of Enhancement-Mode High-kappa LaLuO3-AlGaN/GaN MIS-HEMTs
IEEE transactions on electron devices 60(10), 3040 - 3046 (2013) [10.1109/TED.2013.2277559]  GO

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Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts
Nuclear instruments & methods in physics research / B 307, 408 - 411 (2013) [10.1016/j.nimb.2012.11.088]  GO

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Generation of THz transients by photoexcited single-crystal GaAs meso-structures
Applied physics / B 113(3), 339 - 344 (2013) [10.1007/s00340-013-5495-1]  GO

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Distortions of the coulomb blockade conductance line in scanning gate measurements of inas nanowire based quantum dots
Journal of experimental and theoretical physics 116(1), 138 - 144 (2013) [10.1134/S1063776112130195]  GO

PhD 2013

Dissertation / PhD Thesis

Quantum Transport in Nanowire-based Hybrid Devices
170 (2013)

Dissertation / PhD Thesis

Realization of III-V semiconductor nano structures towards more efficient (opto-) electronic devices
100 (2013)

Dissertation / PhD Thesis

Characterization, integration and reliability of HfO$_2$ and LaLuO$_3$ high-κ/metal gate stacks for CMOS applications
Schriften des Forschungszetrum Jülich, Reihe Information 28, 177 p (2013)

Dissertation / PhD Thesis

Fabrication, Characterization and Simulation of Band-to-Band Tunneling Field-Effect Transistors Based on Silicon-Germanium
123p. (2013)

Dissertation / PhD Thesis

Intrinsische Quantenpunkte in InAs-Nanodrähten
145 (2013)

Diploma thesis 2013

Proceedings and book articels 2013


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