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Peter Grünberg Institute
Semiconductor Nanoelectronics (PGI-9)

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Angular resolved photo emission energy spectroscopy Sb2Te3
Direct observation of Dirac fermions at the surface of topological insulators
Topological insulators (Tis), such as Bi2Te3 and Sb2Te3, are materials with insulating properties in bulk and topologically protected surface states with a linear energy dispersion. Because of the linear energy dispersion, carriers at the surface of Tis may be deemed as quasi-relativistic particles with fascinating properties, such as dissipationless and spin-locked charge transport. Therefore, Tis have the potential for future applications in the field of electronics / spintronics.
More: Direct observation of Dirac fermions at the surface of topological insulators …



Research Topic

Semiconductor nanowires can be formed directly by using the so-called bottom-up approach. In contrast to the usual top-down method where optical or electron beam lithography is employed, this approach has the potential to simply the fabrication of low-dimensional semiconductor nanostructures enormously. More: Research Topic …



What alternatives are there to present computers based on crystals of silicon or other semiconductors? What is – from a physical point of view – the smallest possible device that can be used to perform computational processes? Is there a minimum amount of energy required for floating point operations?

Three students attending the JARA FIT labcourse dressed in a cleanroom overall

JARA FIT Lab Course

Students are invited to participate in the JARA-FIT Lab Course Nanoelectronics. The goal of the practical course is to advance students to current research topics from nano-electronics. Therefore selected experiments take place at genuine research equipments. More: JARA FIT Lab Course …