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Atomic Layer Deposition

Atomic Layer Deposition (ALD) is a versatile method to grow thin film conformal layers, especially high-k dielectrics. Our new system is a custom designed SVTA NorthStar ALD-P-200B equipment with hot wall deposition chamber and load lock chamber provided with port for future transfer/interfacing to UHV systems. The system has a manifold for four precursors, ozone source and heated carrier gas delivery lines with fast ALD valves. The substrate and precursor canisters can be heated. In a first step, we intend to grow binary high-k dielectrics like Al2O3, HfO2, Gd2O3, ZrO2, as gate oxides for nanowire devices and III-V field effect transistors. Later on, ternary oxides, e.g. GdScO3 and LaAlO3, are taken into consideration.

ALD


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