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Sub 32 nm silicon research platform

The realization of the "Sub 32 nm silicon research platform" sustains and enforces the PGI-9 know-how in the field of Information technology. The main goal of this platform is to develop and characterize new functional materials and processes for optimal integration into the 22/20 nm node core CMOS technology aiming not only at proof of concepts but also to direct cooperation with industry.
German Ministry for Education and Research (BMBF) has granted a project (number: 13N9209) for extending PGI-9 Si based technology with state of the art 200/300 mm wafer processing in order to strengthen the research on innovative silicon nano-electronics. Through this funding an Atomic Layer Deposition module, for gate oxide dielectrics, and an Atomic Vapor Deposition module, for metal gates, able to handle 300 mm wafers were added to the existing AIXTRON Si CVD epitaxy modules. In addition, our 200 mm Si processing capabilities were extended with an Oerlikon Balzers sputtering tool, an Oxford dual reactor Reactive Ion Etching, and a Centrotherm oxidation/ nitridation oven.
For this purpose a new laboratory-building with a cleanroom dedicated to 300mm wafer processing was realized. This is the base of the technology- and user-platform „Helmholtz Nanoelectronic Facility“ (HNF) which was founded in 2010.
The new facility expands the cooperation of PGI-9 and top European universities, research centers and industry, bridging the gap between academia and industry in one of the most challenging technology areas.



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