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2009

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Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N2 carrier gas
Journal of crystal growth 311, 3813 - 3816 (2009) [10.1016/j.jcrysgro.2009.06.015] BibTeX | EndNote: XML, Text | RIS

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Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE
Journal of crystal growth 312(1), 1 - 9 (2009) [10.1016/j.jcrysgro.2009.09.044]  GO  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Measurement of effective electron mass in biaxial tensile strained silicon on insulator
Applied physics letters 95, 182101 (2009) [10.1063/1.3254330] BibTeX | EndNote: XML, Text | RIS

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Phase-coherence and symmetry in four-terminal magnetotransport measurements on InN nanowires
Applied physics letters 94, 252107 (2009) [10.1063/1.3159626] BibTeX | EndNote: XML, Text | RIS

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Spin-orbit coupling and phase-coherent transport in InN nanowires
Physical review / B 80, 125321 (2009) [10.1103/PhysRevB.80.125321] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Electrical transport properties of single undoped and n-type doped InN nanowires
Nanotechnology 20, 405206 (2009) [10.1088/0957-4484/20/40/405206] BibTeX | EndNote: XML, Text | RIS

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Origin and limiting mechanism of induced nonequilibrium currents in gated two-dimensional electron systems
Physical review / B 80(11), 115336 (2009) [10.1103/PhysRevB.80.115336] OpenAccess  Download fulltext Files  Download fulltextFulltext Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Spin-orbit coupling in GaxIn1-xAs/InP two-dimensional electron gases and quantum wire structures
Semiconductor science and technology 24, 064001 (2009) [10.1088/0268-1242/24/6/064001] BibTeX | EndNote: XML, Text | RIS

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Low frequency noise in 2DEG channel of AlGaN/GaN heterostructures scaled to nanosize width
AIP conference proceedings 1129, 487-490 (2009) [10.1063/1.3140507] BibTeX | EndNote: XML, Text | RIS


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