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2010

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Strain-enhanced electron mobility anisotropy in InxGa1-xAs/InP two-dimensional electron gases
Physica / E 42, 1130 - 1133 (2010) [10.1016/j.physe.2009.11.039] BibTeX | EndNote: XML, Text | RIS

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Universal conductance fluctuations and localization effects in InN nanowires connected in parallel
Journal of applied physics 108, 113704 (2010) [10.1063/1.3516216] BibTeX | EndNote: XML, Text | RIS

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Spin-orbit coupling and phase coherence in InAs nanowires
Physical review / B 82, 235303 (2010) [10.1103/PhysRevB.82.235303] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Josephson supercurrent in Nb/InN-nanowire/Nb junctions
Applied physics letters 96, 132504 (2010) [10.1063/1.3377897] BibTeX | EndNote: XML, Text | RIS

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Quantum transport in narrow-gap semiconductor nanocolumns
Physica status solidi / C 7, 386 - 389 (2010) [10.1002/pssc.200982506] BibTeX | EndNote: XML, Text | RIS

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Two-Dimensional Optical Control of Electron Spin Orientation by Linearly Polarized Light in InGaAs
Physical review letters 105, 246603 (2010) [10.1103/PhysRevLett.105.246603] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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LaLuO3 as high-k gate dielectric for InAs nanowire structures
Semiconductor science and technology 25, 085001 (2010) [10.1088/0268-1242/25/8/085001] BibTeX | EndNote: XML, Text | RIS

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Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric
Applied physics / A 100, 305 - 308 (2010) [10.1007/s00339-010-5804-z] BibTeX | EndNote: XML, Text | RIS


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