The institute investigates fundamental problems in semiconductor physics and in semiconductor materials. In the device development alternative concepts and property limits are explored, e. g. the maximum transistor frequency and the minimum transistor cross section. The epitaxy of SiGe, classical III/V compounds and of GaN is a broad activity.
Electronic and optical properties of the grown layers are measured. Nanowire structures are investigated to study the quantum mechanical limit in the nanoelectronic devices. Si/SiGe nanostructures are examined to find promissing pathways to drive current CMOS technology to its limits.Templated selfassembly of semiconductor nanostructures in 2- and 3-dimensional arrays and quantum dot crystals is investigated to explore the feasibility of this new materials for future information technology.