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PGI Kolloquium:

Prof. Dr. Tomas Jungwirth,
Academy of Sciences of the Czech Republic & University of Nottingham, UK

PGI Lecture Hall, Building 04.8, 2nd Floor, Room 365

01.02.2019 11:00 Uhr

Antiferromagnetic Memory Devices

JungwirthCopyright: Prof. Dr. Jungwirth

The suppression of dipolar fields in antiferromagnets is favorable for high density integration of memory elements and makes them robust against magnetic field perturbations. A related unique merit of antiferromagnetic spintronics is the multi-level memristive switching, suitable for integrating memory with logic or neuromorphic functionalities. Ultra-fast THz spin dynamics is yet another attractive feature of antiferromagnets.

In the lecture we will first give a brief overview of these multiple directions in current research of antiferromagnetic spintronics [1]. We will then outline the rich symmetry landscape of antiferromagnets which allows for a range of transport phenomena suitable for manipulating and detecting antiferromagnetic spins.

Our main focus will be on electrical readout of spin-reversal in antiferromagnets. This can be facilitated by a second-order magnetoresistance effect in antiferromagnets with broken time and space-inversion symmetries [2]. In the linear response, we introduce a mechanism of the spontaneous Hall effect in collinear antiferromagnets in which the required breaking of time-reversal and other symmetries is caused by the arrangement of non-magnetic atoms in the lattice [3].

[1] T. Jungwirth et al., Nature Physics 14, 200 (2018).
[2] J. Godinho et al., Nature Communications 9, 4686 (2018).
[3] L. Šmejkal et al., arXiv:1901.00445.


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