Exploiting Read Noise of Filamentary VCM ReRAM for Robust TRNG

Published: 25 September 2025

In this paper, the usability of read noise measured on valence change mechanism (VCM) devices for the generation of random numbers is investigated. Especially, the influence of the conduction mechanism on the quality of the generated random numbers is specifically examined. Hence, SrTiO3- and TaOx-based devices are studied as representatives for devices with shallow and deep defect states. Devices with deep oxygen defect states demonstrate superior suitability for the generation of true random numbers, whereas devices with shallow oxygen defect states show a significantly reduced entropy capacity to be used as entropy sources.

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES 1, 1 (2025)
Authors: Kristoffer Schnieders, Peixuan Bai, Yongmin Wang, Tim Kempen, Alexandros Sarantopoulos, Dirk Wouters, Vikas Rana , Regina Dittmann, Rainer Waser, Stephan Menzel, Stefan Wiefels
DOI: 10.1109/TED.2025.3611916

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Dr. Stefan Wiefels