In refereed Journals 2020
Studying the switching variability in redox-based resistive switching devices
Journal of computational electronics 19(4), 1426 - 1432 (2020) [10.1007/s10825-020-01537-y]
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Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions
Advanced electronic materials 6(1), 1900808 - (2020) [10.1002/aelm.201900808]
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Phonon‐Enhanced Near‐Field Spectroscopy to Extract the Local Electronic Properties of Buried 2D Electron Systems in Oxide Heterostructures
Advanced functional materials 30(46), 2004767 (2020) [10.1002/adfm.202004767]
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Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models
IEEE transactions on circuits and systems / 1 Regular papers 67(12), 4618 - 4630 (2020) [10.1109/TCSI.2020.3018502]
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Picosecond multilevel resistive switching in tantalum oxide thin films
Scientific reports 10(1), 16391 (2020) [10.1038/s41598-020-73254-2]
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Emerging materials in neuromorphic computing: Guest editorial
APL materials 8(1), 010401 - (2020) [10.1063/1.5143659]
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Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications
Nanoscale 12(24), 13103 - 13112 (2020) [10.1039/D0NR01847C]
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Comprehensive model for the electronic transport in Pt/SrTi O 3 analog memristive devices
Physical review / B 102(3), 035307 (2020) [10.1103/PhysRevB.102.035307]
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Behavior of cation vacancies in single-crystal and in thin-film SrTiO 3 : The importance of strontium vacancies and their defect associates
Physical review materials 4(12), 123404 (2020) [10.1103/PhysRevMaterials.4.123404]
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Oxygen vacancies: The (in)visible friend of oxide electronics
Applied physics letters 116(12), 120505 - (2020) [10.1063/1.5143309]
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Charge-transfer engineering strategies for tailored ionic conductivity at oxide interfaces
Journal of materials chemistry / C Materials for optical and electronic devices 8(33), 11354 - 11359 (2020) [10.1039/D0TC01780A]
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Antiphase Boundaries Constitute Fast Cation Diffusion Paths in SrTiO 3 Memristive Devices
Advanced functional materials 30(48), 2004118 (2020) [10.1002/adfm.202004118]
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SrTiO 3 termination control: a method to tailor the oxygen exchange kinetics
Materials Research Letters 8(1), 31 - 40 (2020) [10.1080/21663831.2019.1682705]
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Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)
IEEE transactions on electron devices 67(8), 3115 - 3122 (2020) [10.1109/TED.2020.3001247]
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Integration of Individual Functionalized Gold Nanoparticles into Nanoelectrode Configurations: Recent Advances
European journal of inorganic chemistry 2020(40), 3798-3810 (2020) [10.1002/ejic.202000629]
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Copper facilitated nickel oxy-hydroxide films as efficient synergistic oxygen evolution electrocatalyst
Journal of catalysis 384, 189 - 198 (2020) [10.1016/j.jcat.2020.02.023]
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On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices
Nanoscale 11(39), 18201 - 18208 (2019) [10.1039/C9NR06624A]
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Vertical Ge Gate-All-Around Nanowire pMOSFETs With a Diameter Down to 20 nm
IEEE electron device letters 41(4), 533 - 536 (2020) [10.1109/LED.2020.2971034]
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Design of defect-chemical properties and device performance in memristive systems
Science advances 6(19), eaaz9079 - (2020) [10.1126/sciadv.aaz9079]
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Transport through Redox-Active Ru-Terpyridine Complexes Integrated in Single Nanoparticle Devices
The journal of physical chemistry <Washington, DC> / C C, Nanomaterials and interfaces 124(8), 4881 - 4889 (2020) [10.1021/acs.jpcc.9b11716]
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Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism
ACS applied materials & interfaces 12(43), 48773 - 48780 (2020) [10.1021/acsami.0c13020]
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Brain‐Inspired Structural Plasticity through Reweighting and Rewiring in Multi‐Terminal Self‐Organizing Memristive Nanowire Networks
Advanced intelligent systems 2(8), 2000096 - (2020) [10.1002/aisy.202000096]
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Cation diffusion in polycrystalline thin films of monoclinic HfO 2 deposited by atomic layer deposition
APL materials 8(8), 081104 - (2020) [10.1063/5.0013965]
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Defect chemistry of donor-doped BaTiO 3 with BaO-excess for reduction resistant PTCR thermistor applications – redox-behaviour
Physical chemistry, chemical physics 22(15), 8219-8232 (2020) [10.1039/C9CP06793K]
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Electric transport properties of rare earth doped YbxCa1-xMnO3 ceramics (part III: Point defect chemistry)
Journal of the European Ceramic Society 40(5), 2007 - 2012 (2020) [10.1016/j.jeurceramsoc.2019.12.035]
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Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode
Thin solid films 705, 138063 - (2020) [10.1016/j.tsf.2020.138063]
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Control of stoichiometry and morphology in polycrystalline V2O3 thin films using oxygen buffers
Journal of materials science 55(30), 14717 - 14727 (2020) [10.1007/s10853-020-05028-0]
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Memristors with alloyed electrodes
Nature nanotechnology 15(7), 510 - 511 (2020) [10.1038/s41565-020-0702-9]
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Study of the SET switching event of VCM-based memories on a picosecond timescale
Journal of applied physics 127(20), 204501 - (2020) [10.1063/5.0003840]
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HRS Instability in Oxide-Based Bipolar Resistive Switching Cells
IEEE transactions on electron devices 67(10), 4208 - 4215 (2020) [10.1109/TED.2020.3018096]
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Photoemission electron microscopy of magneto-ionic effects in La0.7Sr0.3MnO3
APL materials 8(11), 111102 (2020) [10.1063/5.0022150]
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Tailoring the Cavity of Hollow Polyelectrolyte Microgels
Macromolecular rapid communications 41(1), 1900422 - (2020) [10.1002/marc.201900422]
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Validity of magnetotransport detection of skyrmions in epitaxial SrRuO 3 heterostructures
Physical review materials 4(5), 054402 (2020) [10.1103/PhysRevMaterials.4.054402]
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Electronic Inhomogeneity Influence on the Anomalous Hall Resistivity Loops of SrRuO 3 Epitaxially Interfaced with 5d Perovskites
ACS omega 5(11), 5824 - 5833 (2020) [10.1021/acsomega.9b03996]
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In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches
Advanced intelligent systems 2(10), 2070100 - (2020) [10.1002/aisy.202070100]
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In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches
Advanced intelligent systems 2(10), 2000134 - (2020) [10.1002/aisy.202000134]
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Dynamics of the spatial separation of electrons and mobile oxygen vacancies in oxide heterostructures
Physical review materials 4(10), 104604 (2020) [10.1103/PhysRevMaterials.4.104604]
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