In refereed Journals 2022
Application of the Quantum-Point-Contact Formalism to Model the Filamentary Conduction in Ta 2 O 5 -Based Resistive Switching Devices
Physical review applied 17(3), 034062 (2022) [10.1103/PhysRevApplied.17.034062]
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A Deep Study of Resistance Switching Phenomena in TaO x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification
Advanced electronic materials 8(8), 2200182 - (2022) [10.1002/aelm.202200182]
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Quantitative Determination of Native Point‐Defect Concentrations at the ppm Level in Un‐Doped BaSnO 3 Thin Films
Advanced functional materials 32(19), 2113023 - (2022) [10.1002/adfm.202113023]
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Reliability aspects of binary vector-matrix-multiplications using ReRAM devices
Neuromorphic computing and engineering 2(3), 034001 - (2022) [10.1088/2634-4386/ac6d04]
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Sequence learning, prediction, and replay in networks of spiking neurons
PLoS Computational Biology 18, e1010233 (2022) [10.1371/journal.pcbi.1010233]
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Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors
Advanced functional materials 32(15), 2111242 - (2022) [10.1002/adfm.202111242]
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Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation
Advanced electronic materials 8(11), 2200549 - (2022) [10.1002/aelm.202200549]
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Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories
Advanced materials 34(3), 2105022 (2022) [10.1002/adma.202105022]
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Study on sneak path effect in self-rectifying crossbar arrays based on emerging memristive devices
Frontiers in electronic materials 2, 988785 (2022) [10.3389/femat.2022.988785]
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Nanoionic memristive phenomena in metal oxides: the valence change mechanism
Advances in physics 70(2), 155-349 (2022) [10.1080/00018732.2022.2084006]
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Memristive Devices for Time Domain Compute-in-Memory
IEEE journal on exploratory solid-state computational devices and circuits 8(2), 119 - 127 (2022) [10.1109/JXCDC.2022.3217098]
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Exploring the Ligand Functionality, Electronic Band Gaps, and Switching Characteristics of Single Wells–Dawson‐Type Polyoxometalates on Gold
Advanced materials interfaces 9(21), 2200461 - (2022) [10.1002/admi.202200461]
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Disentangling ionic and electronic contributions to the switching dynamics of memristive Pr 0.7 Ca 0.3 MnO 3 / Al devices by employing a two-resistor model
Physical review materials 6(9), 095002 (2022) [10.1103/PhysRevMaterials.6.095002]
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Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism
Advanced electronic materials 8(8), 2100936 - (2022) [10.1002/aelm.202100936]
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Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance
Review of scientific instruments 93(2), 024705 (2022) [10.1063/5.0080532]
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Separating the Effects of Band Bending and Covalency in Hybrid Perovskite Oxide Electrocatalyst Bilayers for Water Electrolysis
ACS applied materials & interfaces 14(12), 14129–14136 (2022) [10.1021/acsami.1c20337]
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Modulating Spin Polarization and Spin-Orbit Interaction by Submonolayer Engineering at La Al O 3 / Sr Ti O 3 Interfaces
Physical review applied 18(3), 034012 (2022) [10.1103/PhysRevApplied.18.034012]
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Effects of Sr(Co, Nb, Ta)O 3 addition on the defect structures and electrical properties of ZnO-based varistors
Journal of materials chemistry / C 10(25), 9644 - 9654 (2022) [10.1039/D2TC01701F]
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Understanding Structural Incorporation of Oxygen Vacancies in Perovskite Cobaltite Films and Potential Consequences for Electrocatalysis
Chemistry of materials 34(24), 10373–10381 (2022) [10.1021/acs.chemmater.2c02043]
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Rigid-to-Flexible Transition in a Molecular Brush in a Good Solvent at a Semidilute Concentration
Langmuir 38(17), 5226 - 5236 (2022) [10.1021/acs.langmuir.1c02589]
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The role of fluorination during the physicochemical erosion of yttria in fluorine-based etching plasmas
Journal of the European Ceramic Society 42(2), 561 - 566 (2022) [10.1016/j.jeurceramsoc.2021.10.061]
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Processing map to control the erosion of Y 2 O 3 in fluorine based etching plasmas
Journal of the American Ceramic Society 105(5), 3498-3509 (2022) [10.1111/jace.18334]
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Endurance of 2 Mbit Based BEOL Integrated ReRAM
IEEE access 10, 122696 - 122705 (2022) [10.1109/ACCESS.2022.3223657]
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Moisture Effect on the Threshold Switching of TOPO-Stabilized Sub-10 nm HfO 2 Nanocrystals in Nanoscale Devices
The journal of physical chemistry <Washington, DC> / C 126(43), 18571 - 18579 (2022) [10.1021/acs.jpcc.2c06303]
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A Voltage-Controlled, Oscillation-Based ADC Design for Computation-in-Memory Architectures Using Emerging ReRAMs
ACM journal on emerging technologies in computing systems 18(2), 1 - 25 (2022) [10.1145/3451212]
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Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes
Beilstein journal of nanotechnology 13, 219 - 229 (2022) [10.3762/bjnano.13.16]
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Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities
Semiconductor science and technology 37(3), 034002 - (2022) [10.1088/1361-6641/ac4b8a]
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Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications
Advanced materials 34(32), 2201248 - (2022) [10.1002/adma.202201248]
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Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices
IEEE transactions on circuits and systems / 2 69(5), 2473 - 2477 (2022) [10.1109/TCSII.2022.3160304]
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Learning and replaying spatiotemporal sequences: A replication study
Frontiers in integrative neuroscience 16, 113 (2022) [10.3389/fnint.2022.974177]
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Unconventional short-range structural fluctuations in cuprate superconductors
Scientific reports 12(1), 20483 (2022) [10.1038/s41598-022-22150-y]
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Oxygen nonstoichiometry and electrical transport properties of Pr1-Ca MnO3 ceramics
Journal of the European Ceramic Society 42(15), 7049 - 7062 (2022) [10.1016/j.jeurceramsoc.2022.08.006]
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Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities
RSC Advances 12(22), 14235 - 14245 (2022) [10.1039/D2RA02456J]
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Effect of electron conduction on the read noise characteristics in ReRAM devices
APL materials 10(10), 101114 - (2022) [10.1063/5.0109787]
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Filamentary TaO x /HfO 2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing
Advanced electronic materials 8(10), 2200448 - (2022) [10.1002/aelm.202200448]
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Memristively programmable transistors
Nanotechnology 33(4), 045203 - (2022) [10.1088/1361-6528/ac317f]
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Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage
Advanced electronic materials 8(8), 2200215 - (2022) [10.1002/aelm.202200215]
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Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories
Advanced electronic materials 8(8), 2200765 - (2022) [10.1002/aelm.202200765]
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Performance Analysis of Memristive-CNN based on a VCM Device Model
2022 IEEE International Symposium on Circuits and Systems (ISCAS), AustinAustin, TX, 27 May 2022 - 1 Jun 2022
... IEEE International Symposium on Circuits and Systems proceedings 1, 1 (2022) [10.1109/ISCAS48785.2022.9937918]
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Atomistic Insights into Activation and Degradation of La 0.6 Sr 0.4 CoO 3−δ Electrocatalysts under Oxygen Evolution Conditions
Journal of the American Chemical Society 144(39), 17966 - 17979 (2022) [10.1021/jacs.2c07226]
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Activity-Stability Relationships in Oxide Electrocatalysts for Water Electrolysis
Frontiers in Chemistry 10, 913419 (2022) [10.3389/fchem.2022.913419]
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Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition
Scientific reports 12(1), 18743 (2022) [10.1038/s41598-022-22889-4]
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Magnetic interlayer coupling between ferromagnetic SrRuO 3 layers through a SrIrO 3 spacer
Journal of applied physics 131(13), 133902 - (2022) [10.1063/5.0087098]
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Highly-oriented proton conducting BaZr0.9Y0.1O3−x ceramic thin films prepared by chemical solution deposition
Journal of the European Ceramic Society 42(7), 3245 - 3253 (2022) [10.1016/j.jeurceramsoc.2022.02.019]
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Microstructure engineering of yttrium-doped barium zirconate thin films via seed layer technique
Surface and coatings technology 434, 128161 - (2022) [10.1016/j.surfcoat.2022.128161]
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Rebooting Computing in Post Moore Era
Advanced intelligent systems 4(8), 2200161 - (2022) [10.1002/aisy.202200161]
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MNEMOSENE: Tile Architecture and Simulator for Memristor-based Computation-in-memory
ACM journal on emerging technologies in computing systems 18(3), 1 - 24 (2022) [10.1145/3485824]
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Oxygen Diffusion in Platinum Electrodes: A Molecular Dynamics Study of the Role of Extended Defects
Advanced materials interfaces 9(2), 2101257 (2022) [10.1002/admi.202101257]
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