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Selected Publications

Dr. Hilde Hardtdegen

F. Haas, K. Sladek, A. Winden, M. von der Ahe, T. E. Weirich, T. Rieger, H. Lüth, D. Grützmacher, Th. Schäpers, and H Hardtdegen, Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires, Nanotechnology Volume 24, Issue 8, 1 March 2013, Article number 085603. (https://dx.doi.org/10.1088/0957-4484/24/8/085603)


N. Thillosen, K. Sebald, H. Hardtdegen, R. Meijers, R. Calarco, S. Montanari, N. Kaluza, J. Gutowski, and H. Lüth, The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements, Nano Lett. 6, 704 (2006). https://dx.doi.org/10.1021/nl052456q


Th. Schäpers, V. A. Guzenko, M. G. Pala, U. Zülicke, M. Governale, J. Knobbe, and H. Hardtdegen, Suppression of weak antilocalization in Gax In1-x AsInP narrow quantum wires, Physical Review B - Condensed Matter and Materials PhysicsVolume 74, Issue 8, 2006, Article number 081301. https://dx.doi.org/10.1103/PhysRevB.74.081301


H. Hardtdegen, M. Pristvsek, H. Menhal, J.-T. Zettler, W. Richter, D. Schmitz, In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: A comparison to hydrogen atmosphere , J. Cryst. Growth, 195, 211 (1998). https://doi.org/10.1016/S0022-0248(98)00705-2


H. Hardtdegen, M. Hollfelder, R. Meyer, R. Carius, H. Münder, S. Frohnhoff, D. Szynka, H. Lüth, MOVPE growth of GaAs using a N2 carrier, J. Cryst. Growth 1992, 124, 420. https://doi.org/10.1016/0022-0248(92)90494-4


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