Jülich, 19 October 2015 – They are many times faster than flash memories and require significantly less energy: ReRAM memories could revolutionize computer technology in the next few years. However, memristive memory cells are still too error-prone for many applications. A team of researchers from Jülich and Aachen have now discovered how storage cells that rapidly lose data can be distinguished microscopically from those with long-term stability.
More: Solution for ReRAMs with Long-Term Stability …
