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Optoelectronic Applications

The development of light-emitting optoelectronic devices based on Si strongly benefits from the availability of a direct bandgap in our group IV system.

Figure 2. (a):Sketch of lasing action from Fabry-Perot waveguide. Figure 1.:Sketch of lasing action from Fabry-Perot waveguide.

In cooperation with PSI we recently [1] experimentally verified modal gain values in GeSn epilayers up to 110 cm-1. Additionally, we demonstrated, for the first time, an optically pumped direct-bandgap group IV laser operating at temperatures up to 90 K (Fig. 2)) with a clear lasing threshold and corresponding linewidth narrowing.

Figure 1. (b): Excitation and temperature dependent lasing action. Figure 2.: Excitation and temperature dependent lasing action (from [1]).

Clear lasing action was observed in dry-etched Fabry-Perot cavities. The observation of characteristic Fabry-Perot oscillations from the waveguide structures unambiguously proved the realization of a group IV laser.

[1] S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher,
Nat. Photonics, vol. 9, pp. 88–92, 2015.
Lasing in direct-bandgap GeSn alloy grown on Si