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The basis for our crystalline structures is provided by the industrially relevant fabrication technique metalorganic vapor phase epitaxy (MOVPE). Three different MOVPEs are at our disposal:
• AIX 200 single wafer reactor with infrared heating system (AIXTRON) and optical port equipped with an in situ optical sensor EpiR-TT (Laytec) for the epitaxial growth of phase change materials. The Ge, In, Sb, and Te precursors digermane, DADI (or TMIN), TESb and DETe are employed. Nitrogen is used as the carrier gas[1].
• AIX 200 single wafer double reactor system with infrared heating system (AIXTRON) for III/V structures. The Al, Ga, In, As and P precursors TMAl, DMEAAl, TEGa, TMGa, TMIN, AsH3 and PH3 are used as the precursors. Doping is carried out either by using SiH4 or Si2H6 or DMZn as the n- and p-dopant precursors, respectively. Nitrogen is employed as the carrier gas.
• AIX 200/4 single wafer double reactor system with RF heating system (AIXTRON) and optical ports with in situ optical sensors EpiR-DA-TT (Laytec). The Al, Ga, In and N precursors TMAl, TEGa, TMGa, TMIN and NH3 are used as the precursors. Doping is carried out either by using SiH4 or Si2H6 or Cp2Mg as the n- and p-dopant precursors, respectively.
Technological developments and device processing are carried out in the Helmholtz Nano Facility (HNF). One of the most important experimental methods for the assessment and characterization of nano-devices and successful nano-production technology optimization is micro-electro/photoluminescence. Our setup is equipped with a continuous wave He-Cd laser as the excitation source (325 nm). The spot size of the laser is 1 µm. The light is focused on the sample by a 100 x UV objective, resulting in a lateral resolution of 0.5 µm. The sample emission is analyzed by a RENISHAW spectrometer.

M. Mikulics, H. Hardtdegen, R. Adam, D. Grützmacher, D. Gregušová, J. Novák, P. Kordoš, Z. Sofer, J. Serafini, J. Zhang, R. Sobolewski, and M. Marso
Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures
Semicond. Sci. Technol., vol. 29, no. 4, p. 045022, Apr. 2014
DOI: 10.1088/0268-1242/29/4/045022.

M. Mikulics, H. Hardtdegen, A. Winden, A. Fox, M. Marso, Z. Sofer, H. Lüth, D. Grützmacher, and P. Kordoš
Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Phys. status solidi, vol. 9, no. 3–4, pp. 911–914, Mar. 2012
DOI: 10.1002/pssc.201100408.

M. Mikulics, H. Hardtdegen, D. Gregušová, Z. Sofer, P. Šimek, S. Trellenkamp, D. Grützmacher, H. Lüth, P. Kordoš, and M. Marso
Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements
Semicond. Sci. Technol., vol. 27, p. 105008, 2012
DOI: 10.1088/0268-1242/27/10/105008.

H. Hardtdegen, M. Hollfelder, R. Meyer, R. Carius, H. Münder, S. Frohnhoff, D. Szynka, and H. Lüth
MOVPE growth of GaAs using a N2 carrier
J. Cryst. Growth, vol. 124, no. 1–4, pp. 420–426, Nov. 1992
DOI: 10.1016/0022-0248(92)90494-4.