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Negative capacitance FET (NCFET)

The subthreshold swing SS of a conventional MOSFET is given by:

steepslope

Keeping the thermal emission transport mechanism of a MOSFET a steep SS<60mV/dec at 300K can only be achieved when the body factor

steepslope


This can be done by replacing the gate insulator with a ferroelectric layer, forming a negative capacitance FET. In this project we are investigating HfO2 based ferroelectric for NCFETs, focusing on FDSOI and Si nanowire FETs.

NCFET


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