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Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings
Journal of applied physics 104, 044908 () [10.1063/1.2968462] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS
Fabrication of uniaxially strained silicon nanowires
Thin solid films 517, () [10.1016/j.tsf.2008.08.141] BibTeX | EndNote: XML, Text | RIS
Strained Silicon on Wafer Level by Wafer Bonding: Materials Processing, Strain Measurements and Strain Relaxation
ECS transactions 16, 311 () [10.1149/1.2982883] BibTeX | EndNote: XML, Text | RIS
Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation
Materials science and engineering / C 154-155, 168 - 171 () [10.1016/j.mseb.2008.09.037] BibTeX | EndNote: XML, Text | RIS