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2009

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High temperature antimony ion implantation in strained silicon-on-insulator
Solid state electronics 53, 828 - 832 () [10.1016/j.sse.2009.04.036] BibTeX | EndNote: XML, Text | RIS

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Si ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures
Journal of applied physics 105, 114905 () [10.1063/1.3139274] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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High temperature implantation: a solution for N-type junctions in strained silicon
ECS transactions 19, 95 - 103 () BibTeX | EndNote: XML, Text | RIS

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Flash Lamp Activation of n- and p-type dopants in strained and unstrained SOI and HOI
ECS transactions 19, 79 - 86 () BibTeX | EndNote: XML, Text | RIS

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Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers
Applied physics letters 95, 034102 () [10.1063/1.3180279] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Measurement of effective electron mass in biaxial tensile strained silicon on insulator
Applied physics letters 95, 182101 () [10.1063/1.3254330] OpenAccess  Download fulltext Files  Download fulltextFulltext by OpenAccess repository BibTeX | EndNote: XML, Text | RIS

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Silicon Nanowire FETs with Uniaxial Tensile Strain
Solid state electronics 53, 1257 - 1262 () [10.1016/j.sse.2009.10.013] BibTeX | EndNote: XML, Text | RIS


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